Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Oxygen vacancies near the interface in oxide heterostructures can lead to large changes in properties, including metal–insulator transition temperatures or catalytic activity. Here, the authors demonstrate a way to reversibly control the oxygen-vacancy concentration and distribution in oxide heteros...

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Autores principales:	Boyd W. Veal, Seong Keun Kim, Peter Zapol, Hakim Iddir, Peter M. Baldo, Jeffrey A. Eastman
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/40092c7cdfcc4f38a704d292b95f35ef
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spelling	oai:doaj.org-article:40092c7cdfcc4f38a704d292b95f35ef2021-12-02T16:57:40ZInterfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures10.1038/ncomms118922041-1723https://doaj.org/article/40092c7cdfcc4f38a704d292b95f35ef2016-06-01T00:00:00Zhttps://doi.org/10.1038/ncomms11892https://doaj.org/toc/2041-1723Oxygen vacancies near the interface in oxide heterostructures can lead to large changes in properties, including metal–insulator transition temperatures or catalytic activity. Here, the authors demonstrate a way to reversibly control the oxygen-vacancy concentration and distribution in oxide heterostructures.Boyd W. VealSeong Keun KimPeter ZapolHakim IddirPeter M. BaldoJeffrey A. EastmanNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Boyd W. Veal Seong Keun Kim Peter Zapol Hakim Iddir Peter M. Baldo Jeffrey A. Eastman Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
description	Oxygen vacancies near the interface in oxide heterostructures can lead to large changes in properties, including metal–insulator transition temperatures or catalytic activity. Here, the authors demonstrate a way to reversibly control the oxygen-vacancy concentration and distribution in oxide heterostructures.
format	article
author	Boyd W. Veal Seong Keun Kim Peter Zapol Hakim Iddir Peter M. Baldo Jeffrey A. Eastman
author_facet	Boyd W. Veal Seong Keun Kim Peter Zapol Hakim Iddir Peter M. Baldo Jeffrey A. Eastman
author_sort	Boyd W. Veal
title	Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
title_short	Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
title_full	Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
title_fullStr	Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
title_full_unstemmed	Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
title_sort	interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/40092c7cdfcc4f38a704d292b95f35ef
work_keys_str_mv	AT boydwveal interfacialcontrolofoxygenvacancydopingandelectricalconductioninthinfilmoxideheterostructures AT seongkeunkim interfacialcontrolofoxygenvacancydopingandelectricalconductioninthinfilmoxideheterostructures AT peterzapol interfacialcontrolofoxygenvacancydopingandelectricalconductioninthinfilmoxideheterostructures AT hakimiddir interfacialcontrolofoxygenvacancydopingandelectricalconductioninthinfilmoxideheterostructures AT petermbaldo interfacialcontrolofoxygenvacancydopingandelectricalconductioninthinfilmoxideheterostructures AT jeffreyaeastman interfacialcontrolofoxygenvacancydopingandelectricalconductioninthinfilmoxideheterostructures
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Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

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