Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
Oxygen vacancies near the interface in oxide heterostructures can lead to large changes in properties, including metal–insulator transition temperatures or catalytic activity. Here, the authors demonstrate a way to reversibly control the oxygen-vacancy concentration and distribution in oxide heteros...
Enregistré dans:
| Auteurs principaux: | , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2016
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/40092c7cdfcc4f38a704d292b95f35ef |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|