Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics

Abstract Atomically thin two‐dimensional (2D) bismuth oxychalcogenides (Bi2O2X, X = S, Se, Te) have recently attracted extensive attention in the material research community due to their unique structure, outstanding long‐term ambient stability, and high carrier mobility, which enable them as promis...

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Autores principales:	Fakun Wang, Sijie Yang, Jie Wu, Xiaozong Hu, Yuan Li, Huiqiao Li, Xitao Liu, Junhua Luo, Tianyou Zhai
Formato:	article
Lenguaje:	EN
Publicado:	Wiley 2021
Materias:	2D materials Bi2O2Se bismuth oxychalcogenides electronics optoelectronics Materials of engineering and construction. Mechanics of materials TA401-492 Information technology T58.5-58.64
Acceso en línea:	https://doaj.org/article/4069af14343f4dc995130562e4502313
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spelling	oai:doaj.org-article:4069af14343f4dc995130562e45023132021-11-16T06:26:52ZEmerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics2567-316510.1002/inf2.12215https://doaj.org/article/4069af14343f4dc995130562e45023132021-11-01T00:00:00Zhttps://doi.org/10.1002/inf2.12215https://doaj.org/toc/2567-3165Abstract Atomically thin two‐dimensional (2D) bismuth oxychalcogenides (Bi2O2X, X = S, Se, Te) have recently attracted extensive attention in the material research community due to their unique structure, outstanding long‐term ambient stability, and high carrier mobility, which enable them as promising candidates for high‐performance electronic and optoelectronic applications. Herein, we present a comprehensive review on the recent advances of 2D bismuth oxychalcogenides research. We start with an introduction of their fundamental properties including crystal structure and electronic band structure. Next, we summarize the common techniques for synthesizing these 2D structures with high crystallinity and large lateral size. Furthermore, we elaborate on their device applications including transistors, artificial synapses, optical switch and photodetectors. The last but not the least, we summarize the existing challenges and prospects for this emerging 2D bismuth oxychalcogenides field.Fakun WangSijie YangJie WuXiaozong HuYuan LiHuiqiao LiXitao LiuJunhua LuoTianyou ZhaiWileyarticle2D materialsBi2O2Sebismuth oxychalcogenideselectronicsoptoelectronicsMaterials of engineering and construction. Mechanics of materialsTA401-492Information technologyT58.5-58.64ENInfoMat, Vol 3, Iss 11, Pp 1251-1271 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	2D materials Bi2O2Se bismuth oxychalcogenides electronics optoelectronics Materials of engineering and construction. Mechanics of materials TA401-492 Information technology T58.5-58.64
spellingShingle	2D materials Bi2O2Se bismuth oxychalcogenides electronics optoelectronics Materials of engineering and construction. Mechanics of materials TA401-492 Information technology T58.5-58.64 Fakun Wang Sijie Yang Jie Wu Xiaozong Hu Yuan Li Huiqiao Li Xitao Liu Junhua Luo Tianyou Zhai Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
description	Abstract Atomically thin two‐dimensional (2D) bismuth oxychalcogenides (Bi2O2X, X = S, Se, Te) have recently attracted extensive attention in the material research community due to their unique structure, outstanding long‐term ambient stability, and high carrier mobility, which enable them as promising candidates for high‐performance electronic and optoelectronic applications. Herein, we present a comprehensive review on the recent advances of 2D bismuth oxychalcogenides research. We start with an introduction of their fundamental properties including crystal structure and electronic band structure. Next, we summarize the common techniques for synthesizing these 2D structures with high crystallinity and large lateral size. Furthermore, we elaborate on their device applications including transistors, artificial synapses, optical switch and photodetectors. The last but not the least, we summarize the existing challenges and prospects for this emerging 2D bismuth oxychalcogenides field.
format	article
author	Fakun Wang Sijie Yang Jie Wu Xiaozong Hu Yuan Li Huiqiao Li Xitao Liu Junhua Luo Tianyou Zhai
author_facet	Fakun Wang Sijie Yang Jie Wu Xiaozong Hu Yuan Li Huiqiao Li Xitao Liu Junhua Luo Tianyou Zhai
author_sort	Fakun Wang
title	Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
title_short	Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
title_full	Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
title_fullStr	Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
title_full_unstemmed	Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
title_sort	emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
publisher	Wiley
publishDate	2021
url	https://doaj.org/article/4069af14343f4dc995130562e4502313
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Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics

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