Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics

Abstract Atomically thin two‐dimensional (2D) bismuth oxychalcogenides (Bi2O2X, X = S, Se, Te) have recently attracted extensive attention in the material research community due to their unique structure, outstanding long‐term ambient stability, and high carrier mobility, which enable them as promis...

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Bibliographic Details
Main Authors: Fakun Wang, Sijie Yang, Jie Wu, Xiaozong Hu, Yuan Li, Huiqiao Li, Xitao Liu, Junhua Luo, Tianyou Zhai
Format: article
Language:EN
Published: Wiley 2021
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Online Access:https://doaj.org/article/4069af14343f4dc995130562e4502313
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