Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

Abstract Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial $$\upbeta$$ β -Ga2O3 layers is demonstrated using a simulati...

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Autores principales:	Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Mikhail A. Kaliteevski, Carl Hemmingsson
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4115b35e989449199b6203ec563fa32b
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spelling	oai:doaj.org-article:4115b35e989449199b6203ec563fa32b2021-12-02T11:57:57ZDevelopment of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor10.1038/s41598-020-79154-92045-2322https://doaj.org/article/4115b35e989449199b6203ec563fa32b2020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-79154-9https://doaj.org/toc/2045-2322Abstract Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial $$\upbeta$$ β -Ga2O3 layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the $$\upbeta$$ β -Ga2O3 layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type $$\upbeta$$ β -Ga2O3 and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects.Galia PozinaChih-Wei HsuNatalia AbrikossovaMikhail A. KaliteevskiCarl HemmingssonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Galia Pozina Chih-Wei Hsu Natalia Abrikossova Mikhail A. Kaliteevski Carl Hemmingsson Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
description	Abstract Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial $$\upbeta$$ β -Ga2O3 layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the $$\upbeta$$ β -Ga2O3 layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type $$\upbeta$$ β -Ga2O3 and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects.
format	article
author	Galia Pozina Chih-Wei Hsu Natalia Abrikossova Mikhail A. Kaliteevski Carl Hemmingsson
author_facet	Galia Pozina Chih-Wei Hsu Natalia Abrikossova Mikhail A. Kaliteevski Carl Hemmingsson
author_sort	Galia Pozina
title	Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_short	Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_full	Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_fullStr	Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_full_unstemmed	Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_sort	development of β-ga2o3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/4115b35e989449199b6203ec563fa32b
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Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

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