Diamond FinFET without Hydrogen Termination

Abstract In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devi...

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Autores principales:	Biqin Huang, Xiwei Bai, Stephen K. Lam, Kenneth K. Tsang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4162a6be0e2842a59513dbf6ab786a75
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spelling	oai:doaj.org-article:4162a6be0e2842a59513dbf6ab786a752021-12-02T15:09:07ZDiamond FinFET without Hydrogen Termination10.1038/s41598-018-20803-52045-2322https://doaj.org/article/4162a6be0e2842a59513dbf6ab786a752018-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-20803-5https://doaj.org/toc/2045-2322Abstract In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm—wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.Biqin HuangXiwei BaiStephen K. LamKenneth K. TsangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Biqin Huang Xiwei Bai Stephen K. Lam Kenneth K. Tsang Diamond FinFET without Hydrogen Termination
description	Abstract In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm—wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.
format	article
author	Biqin Huang Xiwei Bai Stephen K. Lam Kenneth K. Tsang
author_facet	Biqin Huang Xiwei Bai Stephen K. Lam Kenneth K. Tsang
author_sort	Biqin Huang
title	Diamond FinFET without Hydrogen Termination
title_short	Diamond FinFET without Hydrogen Termination
title_full	Diamond FinFET without Hydrogen Termination
title_fullStr	Diamond FinFET without Hydrogen Termination
title_full_unstemmed	Diamond FinFET without Hydrogen Termination
title_sort	diamond finfet without hydrogen termination
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/4162a6be0e2842a59513dbf6ab786a75
work_keys_str_mv	AT biqinhuang diamondfinfetwithouthydrogentermination AT xiweibai diamondfinfetwithouthydrogentermination AT stephenklam diamondfinfetwithouthydrogentermination AT kennethktsang diamondfinfetwithouthydrogentermination
_version_	1718387869830086656

Diamond FinFET without Hydrogen Termination

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