New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces

Abstract New angle-resolved photoelectron spectroscopy (ARPES) data, recorded at several different photon energies from the Si(111)(7 × 7) surface, show that the well-known S1 and S2 surface states that lie in the bulk band gap are localised at specific (adatom and rest atom) sites on the reconstruc...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	M. E. Dávila, J. Ávila, I. R. Colambo, D. B. Putungan, D. P. Woodruff, M. C. Asensio
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/41dfba1fc055480fa378d17bc95e57ee
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:41dfba1fc055480fa378d17bc95e57ee
record_format	dspace
spelling	oai:doaj.org-article:41dfba1fc055480fa378d17bc95e57ee2021-12-02T16:17:21ZNew insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces10.1038/s41598-021-94664-w2045-2322https://doaj.org/article/41dfba1fc055480fa378d17bc95e57ee2021-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-94664-whttps://doaj.org/toc/2045-2322Abstract New angle-resolved photoelectron spectroscopy (ARPES) data, recorded at several different photon energies from the Si(111)(7 × 7) surface, show that the well-known S1 and S2 surface states that lie in the bulk band gap are localised at specific (adatom and rest atom) sites on the reconstructed surface. The variations in the photoemission intensity from these states as a function of polar and azimuthal emission angle, and incident photon energy, are not consistent with Fermi surface mapping but are well-described by calculations of the multiple elastic scattering in the final state. This localisation of the most shallowly bound S1 state is consistent with the lack of significant dispersion, with no evidence of Fermi surface crossing, implying that the surface is not, as has been previously proposed, metallic in character. Our findings highlight the importance of final state scattering in interpreting ARPES data, an aspect that is routinely ignored and can lead to misleading conclusions.M. E. DávilaJ. ÁvilaI. R. ColamboD. B. PutunganD. P. WoodruffM. C. AsensioNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q M. E. Dávila J. Ávila I. R. Colambo D. B. Putungan D. P. Woodruff M. C. Asensio New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces
description	Abstract New angle-resolved photoelectron spectroscopy (ARPES) data, recorded at several different photon energies from the Si(111)(7 × 7) surface, show that the well-known S1 and S2 surface states that lie in the bulk band gap are localised at specific (adatom and rest atom) sites on the reconstructed surface. The variations in the photoemission intensity from these states as a function of polar and azimuthal emission angle, and incident photon energy, are not consistent with Fermi surface mapping but are well-described by calculations of the multiple elastic scattering in the final state. This localisation of the most shallowly bound S1 state is consistent with the lack of significant dispersion, with no evidence of Fermi surface crossing, implying that the surface is not, as has been previously proposed, metallic in character. Our findings highlight the importance of final state scattering in interpreting ARPES data, an aspect that is routinely ignored and can lead to misleading conclusions.
format	article
author	M. E. Dávila J. Ávila I. R. Colambo D. B. Putungan D. P. Woodruff M. C. Asensio
author_facet	M. E. Dávila J. Ávila I. R. Colambo D. B. Putungan D. P. Woodruff M. C. Asensio
author_sort	M. E. Dávila
title	New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces
title_short	New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces
title_full	New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces
title_fullStr	New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces
title_full_unstemmed	New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces
title_sort	new insight on the role of localisation in the electronic structure of the si(111)(7 × 7) surfaces
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/41dfba1fc055480fa378d17bc95e57ee
work_keys_str_mv	AT medavila newinsightontheroleoflocalisationintheelectronicstructureofthesi11177surfaces AT javila newinsightontheroleoflocalisationintheelectronicstructureofthesi11177surfaces AT ircolambo newinsightontheroleoflocalisationintheelectronicstructureofthesi11177surfaces AT dbputungan newinsightontheroleoflocalisationintheelectronicstructureofthesi11177surfaces AT dpwoodruff newinsightontheroleoflocalisationintheelectronicstructureofthesi11177surfaces AT mcasensio newinsightontheroleoflocalisationintheelectronicstructureofthesi11177surfaces
_version_	1718384226288533504

New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces

Ejemplares similares