New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces

New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces

Abstract New angle-resolved photoelectron spectroscopy (ARPES) data, recorded at several different photon energies from the Si(111)(7 × 7) surface, show that the well-known S1 and S2 surface states that lie in the bulk band gap are localised at specific (adatom and rest atom) sites on the reconstruc...

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Autores principales: M. E. Dávila, J. Ávila, I. R. Colambo, D. B. Putungan, D. P. Woodruff, M. C. Asensio
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/41dfba1fc055480fa378d17bc95e57ee
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