High-performance perovskite solar cell using photonic–plasmonic nanostructure
Abstract In this paper, a coupled optical-electrical modeling method is applied to simulate perovskite solar cells (PSCs) to find ways to improve light absorption by the active layer and ensure that the generated carriers are collected effectively. Initially, a planar structure of the PSC is investi...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/41e307fb9a3c4847ad6ae555c2fb9262 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Abstract In this paper, a coupled optical-electrical modeling method is applied to simulate perovskite solar cells (PSCs) to find ways to improve light absorption by the active layer and ensure that the generated carriers are collected effectively. Initially, a planar structure of the PSC is investigated and its optical losses are determined. To reduce the losses and enhance collection efficiency, a convex light-trapping configuration of PSC is used and the impacts of these nanostructures on all parts of the cell are investigated. In this convex nanostructured PSC, the power conversion efficiency (PCE) is found to be increased when the thickness of the absorbing layer remained unchanged. Then, a plasmonic reflector is applied to trap light inside the perovskite. In this structure, by scattering light through the surface plasmon resonance (SPR) effect of the Au back-contact, the electromagnetic field is found to concentrate in the active layer. This results in increased perovskite absorption and, consequently, a high current density of the cell. In the final structure, which is the integration of these two structures, optical losses are found to be greatly diminished and the short-circuit current density (Jsc) is increased from 18.63 mA/cm2 for the planar structure to 23.5 mA/cm2 for the proposed structure. Due to the increased Jsc and open-circuit voltage (Voc) caused by the improved carrier collection, the PCE increases from 14.62 to 19.54%. |
|---|