High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge alignment with oxygen vacancies.

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Autores principales:	Roda Nur, Takashi Tsuchiya, Kasidit Toprasertpong, Kazuya Terabe, Shinichi Takagi, Mitsuru Takenaka
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/41ed3dedf80d438b9abe08ec480e6d8d
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spelling	oai:doaj.org-article:41ed3dedf80d438b9abe08ec480e6d8d2021-12-02T11:57:51ZHigh responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics10.1038/s43246-020-00103-02662-4443https://doaj.org/article/41ed3dedf80d438b9abe08ec480e6d8d2020-12-01T00:00:00Zhttps://doi.org/10.1038/s43246-020-00103-0https://doaj.org/toc/2662-4443MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge alignment with oxygen vacancies.Roda NurTakashi TsuchiyaKasidit ToprasertpongKazuya TerabeShinichi TakagiMitsuru TakenakaNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 1, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Roda Nur Takashi Tsuchiya Kasidit Toprasertpong Kazuya Terabe Shinichi Takagi Mitsuru Takenaka High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
description	MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge alignment with oxygen vacancies.
format	article
author	Roda Nur Takashi Tsuchiya Kasidit Toprasertpong Kazuya Terabe Shinichi Takagi Mitsuru Takenaka
author_facet	Roda Nur Takashi Tsuchiya Kasidit Toprasertpong Kazuya Terabe Shinichi Takagi Mitsuru Takenaka
author_sort	Roda Nur
title	High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
title_short	High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
title_full	High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
title_fullStr	High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
title_full_unstemmed	High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
title_sort	high responsivity in mos2 phototransistors based on charge trapping hfo2 dielectrics
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/41ed3dedf80d438b9abe08ec480e6d8d
work_keys_str_mv	AT rodanur highresponsivityinmos2phototransistorsbasedonchargetrappinghfo2dielectrics AT takashitsuchiya highresponsivityinmos2phototransistorsbasedonchargetrappinghfo2dielectrics AT kasidittoprasertpong highresponsivityinmos2phototransistorsbasedonchargetrappinghfo2dielectrics AT kazuyaterabe highresponsivityinmos2phototransistorsbasedonchargetrappinghfo2dielectrics AT shinichitakagi highresponsivityinmos2phototransistorsbasedonchargetrappinghfo2dielectrics AT mitsurutakenaka highresponsivityinmos2phototransistorsbasedonchargetrappinghfo2dielectrics
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High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

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