Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression

Numerical calculations of the valence band and conduction band size quantized levels in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs (y = 0.16) double heterostructure were performed for different values of the external uniaxial compression along the [110] direction. They indicate that the two u...

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Autores principales:	Bogdanov, E., Marinţev, P., Minina, N., Mironov, D.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/41f2b867fe2f4bcd947e60b446e5151f
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id	oai:doaj.org-article:41f2b867fe2f4bcd947e60b446e5151f
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spelling	oai:doaj.org-article:41f2b867fe2f4bcd947e60b446e5151f2021-11-21T12:03:05ZEnergy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression2537-63651810-648Xhttps://doaj.org/article/41f2b867fe2f4bcd947e60b446e5151f2011-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4317https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Numerical calculations of the valence band and conduction band size quantized levels in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs (y = 0.16) double heterostructure were performed for different values of the external uniaxial compression along the [110] direction. They indicate that the two upper levels in the valence band—light hole LH1 and heavy hole HH1—intersect at a pressure of about 4 kbar, and a strong LH1-HH1 state mixing develops around the crossover point. The results of calculations explain the nonlinear character of the photon energy shift and electroluminescence intensity increase that were experimentally observed in these structures Bogdanov, E.Marinţev, P.Minina, N.Mironov, D.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 1, Pp 109-114 (2011)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Bogdanov, E. Marinţev, P. Minina, N. Mironov, D. Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
description	Numerical calculations of the valence band and conduction band size quantized levels in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs (y = 0.16) double heterostructure were performed for different values of the external uniaxial compression along the [110] direction. They indicate that the two upper levels in the valence band—light hole LH1 and heavy hole HH1—intersect at a pressure of about 4 kbar, and a strong LH1-HH1 state mixing develops around the crossover point. The results of calculations explain the nonlinear character of the photon energy shift and electroluminescence intensity increase that were experimentally observed in these structures
format	article
author	Bogdanov, E. Marinţev, P. Minina, N. Mironov, D.
author_facet	Bogdanov, E. Marinţev, P. Minina, N. Mironov, D.
author_sort	Bogdanov, E.
title	Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
title_short	Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
title_full	Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
title_fullStr	Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
title_full_unstemmed	Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
title_sort	energy shifts of heavy and light holes and electroluminescence intensity increase in p-alxga1-xas/gaas1-ypy/n-alxga1-xas laser diode heterostructure under uniaxial compression
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2011
url	https://doaj.org/article/41f2b867fe2f4bcd947e60b446e5151f
work_keys_str_mv	AT bogdanove energyshiftsofheavyandlightholesandelectroluminescenceintensityincreaseinpalxga1xasgaas1ypynalxga1xaslaserdiodeheterostructureunderuniaxialcompression AT marintevp energyshiftsofheavyandlightholesandelectroluminescenceintensityincreaseinpalxga1xasgaas1ypynalxga1xaslaserdiodeheterostructureunderuniaxialcompression AT mininan energyshiftsofheavyandlightholesandelectroluminescenceintensityincreaseinpalxga1xasgaas1ypynalxga1xaslaserdiodeheterostructureunderuniaxialcompression AT mironovd energyshiftsofheavyandlightholesandelectroluminescenceintensityincreaseinpalxga1xasgaas1ypynalxga1xaslaserdiodeheterostructureunderuniaxialcompression
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Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression

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