Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression

Numerical calculations of the valence band and conduction band size quantized levels in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs (y = 0.16) double heterostructure were performed for different values of the external uniaxial compression along the [110] direction. They indicate that the two u...

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Bibliographic Details
Main Authors: Bogdanov, E., Marinţev, P., Minina, N., Mironov, D.
Format: article
Language:EN
Published: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
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Online Access:https://doaj.org/article/41f2b867fe2f4bcd947e60b446e5151f
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