Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films

In this work, we carried out measurements of optical constants (refractive index n, ab- sorption coefficient α, extinction coefficient k, optical band gap E ) from transmission spectrum at strong and medium absorption regions on a thin film arsenic As-S-Se-Sn system prepared by a conventional melt...

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Autores principales:	Iaseniuc, Oxana, Andrieş, Andrei, Abaşkin, Vladimir
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2010
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/41f4c05fc9c94849a91f46b51f62a7e0
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spelling	oai:doaj.org-article:41f4c05fc9c94849a91f46b51f62a7e02021-11-21T12:03:33ZOptical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films2537-63651810-648Xhttps://doaj.org/article/41f4c05fc9c94849a91f46b51f62a7e02010-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4289https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In this work, we carried out measurements of optical constants (refractive index n, ab- sorption coefficient α, extinction coefficient k, optical band gap E ) from transmission spectrum at strong and medium absorption regions on a thin film arsenic As-S-Se-Sn system prepared by a conventional melt-quenching technique. Photostructural transformations in amorphous films of (As S Se ) :Sn (x = 0.01 at %) were investigated. The value of the photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); ΔE = 0.07 (±0.01) eV. The refractive index and optical band gap before and after light exposure at λ = 700 nm is n = 2.52÷2.62 (±0.02) and E = 2.09÷2.16 (±0.01) eV. Iaseniuc, OxanaAndrieş, AndreiAbaşkin, VladimirD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 3-4, Pp 339-344 (2010)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Iaseniuc, Oxana Andrieş, Andrei Abaşkin, Vladimir Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films
description	In this work, we carried out measurements of optical constants (refractive index n, ab- sorption coefficient α, extinction coefficient k, optical band gap E ) from transmission spectrum at strong and medium absorption regions on a thin film arsenic As-S-Se-Sn system prepared by a conventional melt-quenching technique. Photostructural transformations in amorphous films of (As S Se ) :Sn (x = 0.01 at %) were investigated. The value of the photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); ΔE = 0.07 (±0.01) eV. The refractive index and optical band gap before and after light exposure at λ = 700 nm is n = 2.52÷2.62 (±0.02) and E = 2.09÷2.16 (±0.01) eV.
format	article
author	Iaseniuc, Oxana Andrieş, Andrei Abaşkin, Vladimir
author_facet	Iaseniuc, Oxana Andrieş, Andrei Abaşkin, Vladimir
author_sort	Iaseniuc, Oxana
title	Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films
title_short	Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films
title_full	Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films
title_fullStr	Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films
title_full_unstemmed	Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films
title_sort	optical properties of chalcogenide (as2s1.5se1.5)0.99:sn0.01 thin films
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2010
url	https://doaj.org/article/41f4c05fc9c94849a91f46b51f62a7e0
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Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films

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