GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization

Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on G...

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Autores principales:	Tadas Paulauskas, Vaidas Pačebutas, Andrejus Geižutis, Sandra Stanionytė, Evelina Dudutienė, Martynas Skapas, Arnas Naujokaitis, Viktorija Strazdienė, Bronislovas Čechavičius, Mária Čaplovičová, Viliam Vretenár, Rafał Jakieła, Arūnas Krotkus
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/420209a231dc4d259a52f54ccf27e415
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spelling	oai:doaj.org-article:420209a231dc4d259a52f54ccf27e4152021-12-02T14:06:58ZGaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization10.1038/s41598-020-58812-y2045-2322https://doaj.org/article/420209a231dc4d259a52f54ccf27e4152020-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-58812-yhttps://doaj.org/toc/2045-2322Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on Ge substrates is comprehensively investigated. Analysis of atomic-resolution anti-phase domain (APD) images in the direct-epitaxy revealed a high-density of Ga vacancies and a reduced Bi content at their boundaries. This likely played a key role in the preferential dissolution of Bi atoms from the APD interiors and Bi spiking in Ge during thermal annealing. Introduction of GaAs buffer on offcut Ge largely suppressed the formation of APDs, producing high-quality bismide with single-variant CuPtB-type ordered domains as large as 200 nm. Atomic-resolution X-ray imaging showed that 2-dimensional Bi-rich (111) planes contain up to x = 9% Bi. The anomalously early onset of localization found in the temperature-dependent photoluminescence suggests enhanced interactions among Bi states, as compared to non-ordered samples. Growth of large-domain single-variant ordered GaAs1-x Bi x films provides new prospects for detailed analysis of the structural modulation effects and may allow to further tailor properties of this alloy for optoelectronic applications.Tadas PaulauskasVaidas PačebutasAndrejus GeižutisSandra StanionytėEvelina DudutienėMartynas SkapasArnas NaujokaitisViktorija StrazdienėBronislovas ČechavičiusMária ČaplovičováViliam VretenárRafał JakiełaArūnas KrotkusNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tadas Paulauskas Vaidas Pačebutas Andrejus Geižutis Sandra Stanionytė Evelina Dudutienė Martynas Skapas Arnas Naujokaitis Viktorija Strazdienė Bronislovas Čechavičius Mária Čaplovičová Viliam Vretenár Rafał Jakieła Arūnas Krotkus GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
description	Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on Ge substrates is comprehensively investigated. Analysis of atomic-resolution anti-phase domain (APD) images in the direct-epitaxy revealed a high-density of Ga vacancies and a reduced Bi content at their boundaries. This likely played a key role in the preferential dissolution of Bi atoms from the APD interiors and Bi spiking in Ge during thermal annealing. Introduction of GaAs buffer on offcut Ge largely suppressed the formation of APDs, producing high-quality bismide with single-variant CuPtB-type ordered domains as large as 200 nm. Atomic-resolution X-ray imaging showed that 2-dimensional Bi-rich (111) planes contain up to x = 9% Bi. The anomalously early onset of localization found in the temperature-dependent photoluminescence suggests enhanced interactions among Bi states, as compared to non-ordered samples. Growth of large-domain single-variant ordered GaAs1-x Bi x films provides new prospects for detailed analysis of the structural modulation effects and may allow to further tailor properties of this alloy for optoelectronic applications.
format	article
author	Tadas Paulauskas Vaidas Pačebutas Andrejus Geižutis Sandra Stanionytė Evelina Dudutienė Martynas Skapas Arnas Naujokaitis Viktorija Strazdienė Bronislovas Čechavičius Mária Čaplovičová Viliam Vretenár Rafał Jakieła Arūnas Krotkus
author_facet	Tadas Paulauskas Vaidas Pačebutas Andrejus Geižutis Sandra Stanionytė Evelina Dudutienė Martynas Skapas Arnas Naujokaitis Viktorija Strazdienė Bronislovas Čechavičius Mária Čaplovičová Viliam Vretenár Rafał Jakieła Arūnas Krotkus
author_sort	Tadas Paulauskas
title	GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
title_short	GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
title_full	GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
title_fullStr	GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
title_full_unstemmed	GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
title_sort	gaas1-x bi x growth on ge: anti-phase domains, ordering, and exciton localization
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/420209a231dc4d259a52f54ccf27e415
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GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization

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