GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on G...
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Autores principales: | Tadas Paulauskas, Vaidas Pačebutas, Andrejus Geižutis, Sandra Stanionytė, Evelina Dudutienė, Martynas Skapas, Arnas Naujokaitis, Viktorija Strazdienė, Bronislovas Čechavičius, Mária Čaplovičová, Viliam Vretenár, Rafał Jakieła, Arūnas Krotkus |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
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Materias: | |
Acceso en línea: | https://doaj.org/article/420209a231dc4d259a52f54ccf27e415 |
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