GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization

GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization

Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on G...

Full description

Saved in:
Bibliographic Details
Main Authors: Tadas Paulauskas, Vaidas Pačebutas, Andrejus Geižutis, Sandra Stanionytė, Evelina Dudutienė, Martynas Skapas, Arnas Naujokaitis, Viktorija Strazdienė, Bronislovas Čechavičius, Mária Čaplovičová, Viliam Vretenár, Rafał Jakieła, Arūnas Krotkus
Format: article
Language:EN
Published: Nature Portfolio 2020
Subjects:
Medicine
R
Science
Q
Online Access:https://doaj.org/article/420209a231dc4d259a52f54ccf27e415
Tags: Add Tag
No Tags, Be the first to tag this record!
Be the first to leave a comment!
You must be logged in first

Similar Items