Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α′-FeRh magnetic elec...

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Autores principales: X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, F. Pan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
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Q
Acceso en línea:https://doaj.org/article/42029c56cd5b4c6faeea1b04f4fba34e
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spelling oai:doaj.org-article:42029c56cd5b4c6faeea1b04f4fba34e2021-12-02T17:06:06ZTunneling anisotropic magnetoresistance driven by magnetic phase transition10.1038/s41467-017-00290-42041-1723https://doaj.org/article/42029c56cd5b4c6faeea1b04f4fba34e2017-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00290-4https://doaj.org/toc/2041-1723Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α′-FeRh magnetic electrode.X. Z. ChenJ. F. FengZ. C. WangJ. ZhangX. Y. ZhongC. SongL. JinB. ZhangF. LiM. JiangY. Z. TanX. J. ZhouG. Y. ShiX. F. ZhouX. D. HanS. C. MaoY. H. ChenX. F. HanF. PanNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
X. Z. Chen
J. F. Feng
Z. C. Wang
J. Zhang
X. Y. Zhong
C. Song
L. Jin
B. Zhang
F. Li
M. Jiang
Y. Z. Tan
X. J. Zhou
G. Y. Shi
X. F. Zhou
X. D. Han
S. C. Mao
Y. H. Chen
X. F. Han
F. Pan
Tunneling anisotropic magnetoresistance driven by magnetic phase transition
description Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α′-FeRh magnetic electrode.
format article
author X. Z. Chen
J. F. Feng
Z. C. Wang
J. Zhang
X. Y. Zhong
C. Song
L. Jin
B. Zhang
F. Li
M. Jiang
Y. Z. Tan
X. J. Zhou
G. Y. Shi
X. F. Zhou
X. D. Han
S. C. Mao
Y. H. Chen
X. F. Han
F. Pan
author_facet X. Z. Chen
J. F. Feng
Z. C. Wang
J. Zhang
X. Y. Zhong
C. Song
L. Jin
B. Zhang
F. Li
M. Jiang
Y. Z. Tan
X. J. Zhou
G. Y. Shi
X. F. Zhou
X. D. Han
S. C. Mao
Y. H. Chen
X. F. Han
F. Pan
author_sort X. Z. Chen
title Tunneling anisotropic magnetoresistance driven by magnetic phase transition
title_short Tunneling anisotropic magnetoresistance driven by magnetic phase transition
title_full Tunneling anisotropic magnetoresistance driven by magnetic phase transition
title_fullStr Tunneling anisotropic magnetoresistance driven by magnetic phase transition
title_full_unstemmed Tunneling anisotropic magnetoresistance driven by magnetic phase transition
title_sort tunneling anisotropic magnetoresistance driven by magnetic phase transition
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/42029c56cd5b4c6faeea1b04f4fba34e
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