Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α′-FeRh magnetic elec...

Full description

Saved in:
Bibliographic Details
Main Authors: X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, F. Pan
Format: article
Language:EN
Published: Nature Portfolio 2017
Subjects:
Science
Q
Online Access:https://doaj.org/article/42029c56cd5b4c6faeea1b04f4fba34e
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doaj.org/article/42029c56cd5b4c6faeea1b04f4fba34e

Similar Items