Electrical detection of hyperbolic phonon-polaritons in heterostructures of graphene and boron nitride

Optoelectronics: guided hyperbolic phonon-polaritons in h-BN boost mid-infrared graphene photodetectors h-BN hyperbolic phonon-polaritons can be probed electrically in a van der Waals photodetector by guiding them towards a graphene junction. A team led by F.H.L. Koppens at ICFO developed a nano-opt...

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Autores principales: Achim Woessner, Romain Parret, Diana Davydovskaya, Yuanda Gao, Jhih-Sheng Wu, Mark B. Lundeberg, Sébastien Nanot, Pablo Alonso-González, Kenji Watanabe, Takashi Taniguchi, Rainer Hillenbrand, Michael M. Fogler, James Hone, Frank H. L. Koppens
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/4206d5c787744aa29c785dfb5c8299dd
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Sumario:Optoelectronics: guided hyperbolic phonon-polaritons in h-BN boost mid-infrared graphene photodetectors h-BN hyperbolic phonon-polaritons can be probed electrically in a van der Waals photodetector by guiding them towards a graphene junction. A team led by F.H.L. Koppens at ICFO developed a nano-optoelectronic device whereby light from a laser beam, shone on a heterostructure of monolayer graphene encapsulated in h-BN, is converted to hyperbolic phonon-polaritons. Once the latter are launched at the edge of a metallic bottom split gate, they propagate as highly confined and directional rays towards graphene, where they are absorbed. This results in the generation of hot carriers which diffuse spatially towards the graphene junction, giving rise to an inhomogeneous temperature distribution which, in turn, leads to a strong photo-response. Besides enhanced responsivity and room temperature operation, this mid-infrared photodetector possesses tunable frequency selectivity, making it appealing for imaging and sensing applications.