Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)
The impedance of single-crystal samples of PbTe(Ga) and Pb1-XGeXTe(Ga) (0≤x≤0.095) is investigated in the frequency range from 102 to 106 Hz and temperature range 4.2–300 K. The temperature dependence of the capacitance of all the Pb1-XGeXTe(Ga) samples studied exhibited two types of features....
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Auteurs principaux: | , , , |
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Format: | article |
Langue: | EN |
Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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Accès en ligne: | https://doaj.org/article/420e58fdcc1f4365a08fbff788c65f92 |
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Résumé: | The impedance of single-crystal samples of PbTe(Ga) and Pb1-XGeXTe(Ga) (0≤x≤0.095)
is investigated in the frequency range from 102
to 106
Hz and temperature range 4.2–300 K.
The temperature dependence of the capacitance of all the Pb1-XGeXTe(Ga) samples studied
exhibited two types of features. These are a pronounced peak at a temperature T ~ Tph, caused
by a dielectric anomaly at the ferroelectric phase transition, and strong frequency dependent
increase of the capacitance in the temperature region T |
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