Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)

The impedance of single-crystal samples of PbTe(Ga) and Pb1-XGeXTe(Ga) (0≤x≤0.095) is investigated in the frequency range from 102 to 106 Hz and temperature range 4.2–300 K. The temperature dependence of the capacitance of all the Pb1-XGeXTe(Ga) samples studied exhibited two types of features....

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Autores principales: Achimov, B., Hohlov, Dumitru, Priadun, V., Riabova, L.
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
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Acceso en línea:https://doaj.org/article/420e58fdcc1f4365a08fbff788c65f92
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spelling oai:doaj.org-article:420e58fdcc1f4365a08fbff788c65f922021-11-21T12:10:06ZFerroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)2537-63651810-648Xhttps://doaj.org/article/420e58fdcc1f4365a08fbff788c65f922006-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3409https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The impedance of single-crystal samples of PbTe(Ga) and Pb1-XGeXTe(Ga) (0≤x≤0.095) is investigated in the frequency range from 102 to 106 Hz and temperature range 4.2–300 K. The temperature dependence of the capacitance of all the Pb1-XGeXTe(Ga) samples studied exhibited two types of features. These are a pronounced peak at a temperature T ~ Tph, caused by a dielectric anomaly at the ferroelectric phase transition, and strong frequency dependent increase of the capacitance in the temperature region T Achimov, B.Hohlov, DumitruPriadun, V.Riabova, L.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 1, Pp 27-31 (2006)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Achimov, B.
Hohlov, Dumitru
Priadun, V.
Riabova, L.
Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)
description The impedance of single-crystal samples of PbTe(Ga) and Pb1-XGeXTe(Ga) (0≤x≤0.095) is investigated in the frequency range from 102 to 106 Hz and temperature range 4.2–300 K. The temperature dependence of the capacitance of all the Pb1-XGeXTe(Ga) samples studied exhibited two types of features. These are a pronounced peak at a temperature T ~ Tph, caused by a dielectric anomaly at the ferroelectric phase transition, and strong frequency dependent increase of the capacitance in the temperature region T
format article
author Achimov, B.
Hohlov, Dumitru
Priadun, V.
Riabova, L.
author_facet Achimov, B.
Hohlov, Dumitru
Priadun, V.
Riabova, L.
author_sort Achimov, B.
title Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)
title_short Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)
title_full Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)
title_fullStr Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)
title_full_unstemmed Ferroelectric phase transition and impurity-lattice correlations in Pb1-XGeXTe(Ga)
title_sort ferroelectric phase transition and impurity-lattice correlations in pb1-xgexte(ga)
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2006
url https://doaj.org/article/420e58fdcc1f4365a08fbff788c65f92
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