Thin-film electronics based on all-2D van der Waals heterostructures

Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the d...

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Autores principales:	Xinling Liu, Xiaomin Yang, Weihui Sang, Hai Huang, Wenwu Li, Yen-Fu Lin, Junhao Chu
Formato:	article
Lenguaje:	EN
Publicado:	Taylor & Francis Group 2021
Materias:	van-der-waals interactions all-2d heterostructure thin-film electronics field-effect transistors (fets) photodetectors Computer engineering. Computer hardware TK7885-7895
Acceso en línea:	https://doaj.org/article/423fb7f621d449ef80f7d58aafce9bc1
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id	oai:doaj.org-article:423fb7f621d449ef80f7d58aafce9bc1
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spelling	oai:doaj.org-article:423fb7f621d449ef80f7d58aafce9bc12021-11-26T11:19:47ZThin-film electronics based on all-2D van der Waals heterostructures1598-03162158-160610.1080/15980316.2021.1982782https://doaj.org/article/423fb7f621d449ef80f7d58aafce9bc12021-10-01T00:00:00Zhttp://dx.doi.org/10.1080/15980316.2021.1982782https://doaj.org/toc/1598-0316https://doaj.org/toc/2158-1606Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.Xinling LiuXiaomin YangWeihui SangHai HuangWenwu LiYen-Fu LinJunhao ChuTaylor & Francis Grouparticlevan-der-waals interactionsall-2d heterostructurethin-film electronicsfield-effect transistors (fets)photodetectorsComputer engineering. Computer hardwareTK7885-7895ENJournal of Information Display, Vol 22, Iss 4, Pp 231-245 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	van-der-waals interactions all-2d heterostructure thin-film electronics field-effect transistors (fets) photodetectors Computer engineering. Computer hardware TK7885-7895
spellingShingle	van-der-waals interactions all-2d heterostructure thin-film electronics field-effect transistors (fets) photodetectors Computer engineering. Computer hardware TK7885-7895 Xinling Liu Xiaomin Yang Weihui Sang Hai Huang Wenwu Li Yen-Fu Lin Junhao Chu Thin-film electronics based on all-2D van der Waals heterostructures
description	Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
format	article
author	Xinling Liu Xiaomin Yang Weihui Sang Hai Huang Wenwu Li Yen-Fu Lin Junhao Chu
author_facet	Xinling Liu Xiaomin Yang Weihui Sang Hai Huang Wenwu Li Yen-Fu Lin Junhao Chu
author_sort	Xinling Liu
title	Thin-film electronics based on all-2D van der Waals heterostructures
title_short	Thin-film electronics based on all-2D van der Waals heterostructures
title_full	Thin-film electronics based on all-2D van der Waals heterostructures
title_fullStr	Thin-film electronics based on all-2D van der Waals heterostructures
title_full_unstemmed	Thin-film electronics based on all-2D van der Waals heterostructures
title_sort	thin-film electronics based on all-2d van der waals heterostructures
publisher	Taylor & Francis Group
publishDate	2021
url	https://doaj.org/article/423fb7f621d449ef80f7d58aafce9bc1
work_keys_str_mv	AT xinlingliu thinfilmelectronicsbasedonall2dvanderwaalsheterostructures AT xiaominyang thinfilmelectronicsbasedonall2dvanderwaalsheterostructures AT weihuisang thinfilmelectronicsbasedonall2dvanderwaalsheterostructures AT haihuang thinfilmelectronicsbasedonall2dvanderwaalsheterostructures AT wenwuli thinfilmelectronicsbasedonall2dvanderwaalsheterostructures AT yenfulin thinfilmelectronicsbasedonall2dvanderwaalsheterostructures AT junhaochu thinfilmelectronicsbasedonall2dvanderwaalsheterostructures
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Thin-film electronics based on all-2D van der Waals heterostructures

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