Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
The nature of defects in transition metal dichalcogenide semiconductors is still under debate. Here, the authors determine the atomic structure and electronic properties of chalcogen-site point defects common to monolayer MoSe2 and WS2, and find that these are substitutional defects, where a chalcog...
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Nature Portfolio
2019
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oai:doaj.org-article:424999911e3342b98dd22998bd3723022021-12-02T14:39:18ZIdentifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides10.1038/s41467-019-11342-22041-1723https://doaj.org/article/424999911e3342b98dd22998bd3723022019-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-11342-2https://doaj.org/toc/2041-1723The nature of defects in transition metal dichalcogenide semiconductors is still under debate. Here, the authors determine the atomic structure and electronic properties of chalcogen-site point defects common to monolayer MoSe2 and WS2, and find that these are substitutional defects, where a chalcogen atom is substituted by an oxygen atom, rather than vacancies.Sara BarjaSivan Refaely-AbramsonBruno SchulerDiana Y. QiuArtem PulkinSebastian WickenburgHyejin RyuMiguel M. UgedaChristoph KastlChristopher ChenChoongyu HwangAdam SchwartzbergShaul AloniSung-Kwan MoD. Frank OgletreeMichael F. CrommieOleg V. YazyevSteven G. LouieJeffrey B. NeatonAlexander Weber-BargioniNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019) |
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DOAJ |
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EN |
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Science Q |
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Science Q Sara Barja Sivan Refaely-Abramson Bruno Schuler Diana Y. Qiu Artem Pulkin Sebastian Wickenburg Hyejin Ryu Miguel M. Ugeda Christoph Kastl Christopher Chen Choongyu Hwang Adam Schwartzberg Shaul Aloni Sung-Kwan Mo D. Frank Ogletree Michael F. Crommie Oleg V. Yazyev Steven G. Louie Jeffrey B. Neaton Alexander Weber-Bargioni Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides |
| description |
The nature of defects in transition metal dichalcogenide semiconductors is still under debate. Here, the authors determine the atomic structure and electronic properties of chalcogen-site point defects common to monolayer MoSe2 and WS2, and find that these are substitutional defects, where a chalcogen atom is substituted by an oxygen atom, rather than vacancies. |
| format |
article |
| author |
Sara Barja Sivan Refaely-Abramson Bruno Schuler Diana Y. Qiu Artem Pulkin Sebastian Wickenburg Hyejin Ryu Miguel M. Ugeda Christoph Kastl Christopher Chen Choongyu Hwang Adam Schwartzberg Shaul Aloni Sung-Kwan Mo D. Frank Ogletree Michael F. Crommie Oleg V. Yazyev Steven G. Louie Jeffrey B. Neaton Alexander Weber-Bargioni |
| author_facet |
Sara Barja Sivan Refaely-Abramson Bruno Schuler Diana Y. Qiu Artem Pulkin Sebastian Wickenburg Hyejin Ryu Miguel M. Ugeda Christoph Kastl Christopher Chen Choongyu Hwang Adam Schwartzberg Shaul Aloni Sung-Kwan Mo D. Frank Ogletree Michael F. Crommie Oleg V. Yazyev Steven G. Louie Jeffrey B. Neaton Alexander Weber-Bargioni |
| author_sort |
Sara Barja |
| title |
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides |
| title_short |
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides |
| title_full |
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides |
| title_fullStr |
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides |
| title_full_unstemmed |
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides |
| title_sort |
identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides |
| publisher |
Nature Portfolio |
| publishDate |
2019 |
| url |
https://doaj.org/article/424999911e3342b98dd22998bd372302 |
| work_keys_str_mv |
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