Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

The nature of defects in transition metal dichalcogenide semiconductors is still under debate. Here, the authors determine the atomic structure and electronic properties of chalcogen-site point defects common to monolayer MoSe2 and WS2, and find that these are substitutional defects, where a chalcog...

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Autores principales: Sara Barja, Sivan Refaely-Abramson, Bruno Schuler, Diana Y. Qiu, Artem Pulkin, Sebastian Wickenburg, Hyejin Ryu, Miguel M. Ugeda, Christoph Kastl, Christopher Chen, Choongyu Hwang, Adam Schwartzberg, Shaul Aloni, Sung-Kwan Mo, D. Frank Ogletree, Michael F. Crommie, Oleg V. Yazyev, Steven G. Louie, Jeffrey B. Neaton, Alexander Weber-Bargioni
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Science
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Acceso en línea:https://doaj.org/article/424999911e3342b98dd22998bd372302
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