Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field effect transistor mobility that depends on step...

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Autores principales:	Tao He, Yanfei Wu, Gabriele D’Avino, Elliot Schmidt, Matthias Stolte, Jérôme Cornil, David Beljonne, P. Paul Ruden, Frank Würthner, C. Daniel Frisbie
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/426e501ef30d4156a254ca5dd69ba923
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spelling	oai:doaj.org-article:426e501ef30d4156a254ca5dd69ba9232021-12-02T15:34:16ZCrystal step edges can trap electrons on the surfaces of n-type organic semiconductors10.1038/s41467-018-04479-z2041-1723https://doaj.org/article/426e501ef30d4156a254ca5dd69ba9232018-05-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-04479-zhttps://doaj.org/toc/2041-1723The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field effect transistor mobility that depends on step density.Tao HeYanfei WuGabriele D’AvinoElliot SchmidtMatthias StolteJérôme CornilDavid BeljonneP. Paul RudenFrank WürthnerC. Daniel FrisbieNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Tao He Yanfei Wu Gabriele D’Avino Elliot Schmidt Matthias Stolte Jérôme Cornil David Beljonne P. Paul Ruden Frank Würthner C. Daniel Frisbie Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
description	The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field effect transistor mobility that depends on step density.
format	article
author	Tao He Yanfei Wu Gabriele D’Avino Elliot Schmidt Matthias Stolte Jérôme Cornil David Beljonne P. Paul Ruden Frank Würthner C. Daniel Frisbie
author_facet	Tao He Yanfei Wu Gabriele D’Avino Elliot Schmidt Matthias Stolte Jérôme Cornil David Beljonne P. Paul Ruden Frank Würthner C. Daniel Frisbie
author_sort	Tao He
title	Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
title_short	Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
title_full	Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
title_fullStr	Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
title_full_unstemmed	Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
title_sort	crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/426e501ef30d4156a254ca5dd69ba923
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Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

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