Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field effect transistor mobility that depends on step...
Guardado en:
Autores principales: | Tao He, Yanfei Wu, Gabriele D’Avino, Elliot Schmidt, Matthias Stolte, Jérôme Cornil, David Beljonne, P. Paul Ruden, Frank Würthner, C. Daniel Frisbie |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
|
Materias: | |
Acceso en línea: | https://doaj.org/article/426e501ef30d4156a254ca5dd69ba923 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Rotator side chains trigger cooperative transition for shape and function memory effect in organic semiconductors
por: Hyunjoong Chung, et al.
Publicado: (2018) -
Repurposing DNA-binding agents as H-bonded organic semiconductors
por: Fengjiao Zhang, et al.
Publicado: (2019) -
Graphene-edge dielectrophoretic tweezers for trapping of biomolecules
por: Avijit Barik, et al.
Publicado: (2017) -
Elementary steps in electrical doping of organic semiconductors
por: Max L. Tietze, et al.
Publicado: (2018) -
Dynamic lattice distortions driven by surface trapping in semiconductor nanocrystals
por: Burak Guzelturk, et al.
Publicado: (2021)