Style de citation APA (7e éd.)

Tian, T., Zhang, S., Guo, Y., Zhang, J., Pan, D. Z., & Yang, K. (2019). A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer. IEEE.

Style de citation Chicago (17e éd.)

Tian, Tao, Sheng-Li Zhang, Yu-Feng Guo, Jun Zhang, David Z. Pan, et Ke-Meng Yang. A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer. IEEE, 2019.

Style de citation MLA (8e éd.)

Tian, Tao, et al. A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer. IEEE, 2019.