A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer

In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (<italic>Q&...

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Autores principales:	Tao Tian, Sheng-Li Zhang, Yu-Feng Guo, Jun Zhang, David Z. Pan, Ke-Meng Yang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Variation of lateral doping (VLD) lateral insulated gate bipolar transistor (LIGBT) linear doping turn-off loss silicon-on-insulator (SOI) Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/42a379e7ba5e45bfbfcf7742447f34c9
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spelling	oai:doaj.org-article:42a379e7ba5e45bfbfcf7742447f34c92021-11-19T00:00:55ZA New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer2168-673410.1109/JEDS.2018.2877765https://doaj.org/article/42a379e7ba5e45bfbfcf7742447f34c92019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8506354/https://doaj.org/toc/2168-6734In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (<italic>Q</italic>) and gradient (<italic>G</italic>) compared with Uniform P-buried (UPB) SOI LIGBT. The larger capacitance effect induced by lager <italic>Q</italic> and faster depletion leads to the lower rising anode voltage and reduced storage charge in the drift region. Therefore, a considerable low turn-off loss (<italic>E</italic><sub>off</sub>) can be obtained. It is worth to note that owing to reshaped electric field in the new structure, the excess carriers of the drift region could be removed more quickly. Furthermore, larger G of the VLD layer improves the tradeoff between breakdown voltage and turn-off loss. The results of 2-D simulation indicate that the <italic>E</italic><sub>off</sub> of the proposed device can reduce by 29.4% and 69.7% at 100 A<inline-formula> <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup> and 200 A<inline-formula> <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup>, respectively, when compared with UPB SOI LIGBTTao TianSheng-Li ZhangYu-Feng GuoJun ZhangDavid Z. PanKe-Meng YangIEEEarticleVariation of lateral doping (VLD)lateral insulated gate bipolar transistor (LIGBT)linear dopingturn-off losssilicon-on-insulator (SOI)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 62-69 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Variation of lateral doping (VLD) lateral insulated gate bipolar transistor (LIGBT) linear doping turn-off loss silicon-on-insulator (SOI) Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Variation of lateral doping (VLD) lateral insulated gate bipolar transistor (LIGBT) linear doping turn-off loss silicon-on-insulator (SOI) Electrical engineering. Electronics. Nuclear engineering TK1-9971 Tao Tian Sheng-Li Zhang Yu-Feng Guo Jun Zhang David Z. Pan Ke-Meng Yang A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
description	In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (<italic>Q</italic>) and gradient (<italic>G</italic>) compared with Uniform P-buried (UPB) SOI LIGBT. The larger capacitance effect induced by lager <italic>Q</italic> and faster depletion leads to the lower rising anode voltage and reduced storage charge in the drift region. Therefore, a considerable low turn-off loss (<italic>E</italic><sub>off</sub>) can be obtained. It is worth to note that owing to reshaped electric field in the new structure, the excess carriers of the drift region could be removed more quickly. Furthermore, larger G of the VLD layer improves the tradeoff between breakdown voltage and turn-off loss. The results of 2-D simulation indicate that the <italic>E</italic><sub>off</sub> of the proposed device can reduce by 29.4% and 69.7% at 100 A<inline-formula> <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup> and 200 A<inline-formula> <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup>, respectively, when compared with UPB SOI LIGBT
format	article
author	Tao Tian Sheng-Li Zhang Yu-Feng Guo Jun Zhang David Z. Pan Ke-Meng Yang
author_facet	Tao Tian Sheng-Li Zhang Yu-Feng Guo Jun Zhang David Z. Pan Ke-Meng Yang
author_sort	Tao Tian
title	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_short	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_full	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_fullStr	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_full_unstemmed	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_sort	new low turn-off loss soi lateral insulated gate bipolar transistor with buried variation of lateral doping layer
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/42a379e7ba5e45bfbfcf7742447f34c9
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A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer

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