A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (<italic>Q&...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
IEEE
2019
|
| Subjects: | |
| Online Access: | https://doaj.org/article/42a379e7ba5e45bfbfcf7742447f34c9 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!