Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (R<sub>onA</sub>). In this paper, CS-SJ HEMT is compared with SJ HEM...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/42a6b8b624684a54b04941b1d14df036 |
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| Sumario: | A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (R<sub>onA</sub>). In this paper, CS-SJ HEMT is compared with SJ HEMT with traditional structure (TS-SJ HEMT), SJ HEMT with only particular doping pillars (DP-SJ HEMT) and SJ HEMT with only special P-gate (SP-SJ HEMT). The particular doping pillars mean the doping concentration of n-pillar increases with a gradient from top to bottom, and the concentration of p-pillar is the same as the middle of n-pillar, which reduces the R<sub>onA</sub> by only 4%. The special P-GaN cap layer can reduce the R<sub>onA</sub> by 10%, and it can even increase the on-state current in the saturation region. The CS-SJ HEMT combines both doping pillars and special P-gate structures, and the R<sub>onA</sub> can be reduced by 14%. By the optimized design, the R<sub>onA</sub> can be reduced by 30% with BV = 2580 V, or the R<sub>onA</sub> can be reduced by 21% with BV = 2720 V. These results show that the composite structure of SJ HEMT contributes to improving the BV and R<sub>onA</sub> and propose a useful approach for improving the vertical HEMTs. |
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