Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (R<sub>onA</sub>). In this paper, CS-SJ HEMT is compared with SJ HEM...

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Autores principales:	Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	GaN-based vertical SJ HEMT particular doping pillars special P-gate specific on-resistance breakdown voltage Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/42a6b8b624684a54b04941b1d14df036
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spelling	oai:doaj.org-article:42a6b8b624684a54b04941b1d14df0362021-11-19T00:06:18ZStudy of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance2169-353610.1109/ACCESS.2021.3049374https://doaj.org/article/42a6b8b624684a54b04941b1d14df0362021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9314005/https://doaj.org/toc/2169-3536A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (R<sub>onA</sub>). In this paper, CS-SJ HEMT is compared with SJ HEMT with traditional structure (TS-SJ HEMT), SJ HEMT with only particular doping pillars (DP-SJ HEMT) and SJ HEMT with only special P-gate (SP-SJ HEMT). The particular doping pillars mean the doping concentration of n-pillar increases with a gradient from top to bottom, and the concentration of p-pillar is the same as the middle of n-pillar, which reduces the R<sub>onA</sub> by only 4%. The special P-GaN cap layer can reduce the R<sub>onA</sub> by 10%, and it can even increase the on-state current in the saturation region. The CS-SJ HEMT combines both doping pillars and special P-gate structures, and the R<sub>onA</sub> can be reduced by 14%. By the optimized design, the R<sub>onA</sub> can be reduced by 30% with BV = 2580 V, or the R<sub>onA</sub> can be reduced by 21% with BV = 2720 V. These results show that the composite structure of SJ HEMT contributes to improving the BV and R<sub>onA</sub> and propose a useful approach for improving the vertical HEMTs.Miao ZhangZhiyou GuoYong HuangYuan LiJiancheng MaXiaoyu XiaXiuyang TanFan XiaHuiqing SunIEEEarticleGaN-based vertical SJ HEMTparticular doping pillarsspecial P-gatespecific on-resistancebreakdown voltageElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Access, Vol 9, Pp 9895-9902 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaN-based vertical SJ HEMT particular doping pillars special P-gate specific on-resistance breakdown voltage Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	GaN-based vertical SJ HEMT particular doping pillars special P-gate specific on-resistance breakdown voltage Electrical engineering. Electronics. Nuclear engineering TK1-9971 Miao Zhang Zhiyou Guo Yong Huang Yuan Li Jiancheng Ma Xiaoyu Xia Xiuyang Tan Fan Xia Huiqing Sun Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
description	A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (R<sub>onA</sub>). In this paper, CS-SJ HEMT is compared with SJ HEMT with traditional structure (TS-SJ HEMT), SJ HEMT with only particular doping pillars (DP-SJ HEMT) and SJ HEMT with only special P-gate (SP-SJ HEMT). The particular doping pillars mean the doping concentration of n-pillar increases with a gradient from top to bottom, and the concentration of p-pillar is the same as the middle of n-pillar, which reduces the R<sub>onA</sub> by only 4%. The special P-GaN cap layer can reduce the R<sub>onA</sub> by 10%, and it can even increase the on-state current in the saturation region. The CS-SJ HEMT combines both doping pillars and special P-gate structures, and the R<sub>onA</sub> can be reduced by 14%. By the optimized design, the R<sub>onA</sub> can be reduced by 30% with BV = 2580 V, or the R<sub>onA</sub> can be reduced by 21% with BV = 2720 V. These results show that the composite structure of SJ HEMT contributes to improving the BV and R<sub>onA</sub> and propose a useful approach for improving the vertical HEMTs.
format	article
author	Miao Zhang Zhiyou Guo Yong Huang Yuan Li Jiancheng Ma Xiaoyu Xia Xiuyang Tan Fan Xia Huiqing Sun
author_facet	Miao Zhang Zhiyou Guo Yong Huang Yuan Li Jiancheng Ma Xiaoyu Xia Xiuyang Tan Fan Xia Huiqing Sun
author_sort	Miao Zhang
title	Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
title_short	Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
title_full	Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
title_fullStr	Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
title_full_unstemmed	Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
title_sort	study of algan/gan vertical superjunction hemt for improvement of breakdown voltage and specific on-resistance
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/42a6b8b624684a54b04941b1d14df036
work_keys_str_mv	AT miaozhang studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT zhiyouguo studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT yonghuang studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT yuanli studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT jianchengma studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT xiaoyuxia studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT xiuyangtan studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT fanxia studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance AT huiqingsun studyofalganganverticalsuperjunctionhemtforimprovementofbreakdownvoltageandspecificonresistance
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Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

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