Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (R<sub>onA</sub>). In this paper, CS-SJ HEMT is compared with SJ HEM...
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| Auteurs principaux: | , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/42a6b8b624684a54b04941b1d14df036 |
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