Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Electronics: encapsulated black phosphorous enables stable, long-lasting transistors Field effect transistors made of ultra-thin black phosphorous can retain long-term stability and reproducible electrical characteristics. A team led by Prof. Deji Akinwande at UT Austin developed a conformal encapsu...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Yu. Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J.-S. Kim, D. Akinwande, T. Grasser
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/42dbdc5beb3c45e1bf47ac3c7c484a9b
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:42dbdc5beb3c45e1bf47ac3c7c484a9b
record_format	dspace
spelling	oai:doaj.org-article:42dbdc5beb3c45e1bf47ac3c7c484a9b2021-12-02T13:41:45ZHighly-stable black phosphorus field-effect transistors with low density of oxide traps10.1038/s41699-017-0025-32397-7132https://doaj.org/article/42dbdc5beb3c45e1bf47ac3c7c484a9b2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0025-3https://doaj.org/toc/2397-7132Electronics: encapsulated black phosphorous enables stable, long-lasting transistors Field effect transistors made of ultra-thin black phosphorous can retain long-term stability and reproducible electrical characteristics. A team led by Prof. Deji Akinwande at UT Austin developed a conformal encapsulation method of black phosphorous transistors with a 25 nm thick Al2O3 layer. Characterization of these devices by Dr. Yury Illarionov at TU Wien has shown that encapsulation results in a substantial improvement of device stability and reliability for at least 17 months in ambient conditions. The density of oxide traps that would cause deleterious variations of the device threshold voltage, thus hindering reproducibility, is as low as 1017 cm−3/eV at room temperature. This is comparable to values obtained for commercial silicon devices. Remarkably, the subthreshold slope of the black phosphorous field-effect transistors becomes steeper after several months, a signature of performance improvement that points towards a positive aging effect, despite extended storage and operation in the laboratory environment.Yu. Yu. IllarionovM. WaltlG. RzepaT. KnoblochJ.-S. KimD. AkinwandeT. GrasserNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Yu. Yu. Illarionov M. Waltl G. Rzepa T. Knobloch J.-S. Kim D. Akinwande T. Grasser Highly-stable black phosphorus field-effect transistors with low density of oxide traps
description	Electronics: encapsulated black phosphorous enables stable, long-lasting transistors Field effect transistors made of ultra-thin black phosphorous can retain long-term stability and reproducible electrical characteristics. A team led by Prof. Deji Akinwande at UT Austin developed a conformal encapsulation method of black phosphorous transistors with a 25 nm thick Al2O3 layer. Characterization of these devices by Dr. Yury Illarionov at TU Wien has shown that encapsulation results in a substantial improvement of device stability and reliability for at least 17 months in ambient conditions. The density of oxide traps that would cause deleterious variations of the device threshold voltage, thus hindering reproducibility, is as low as 1017 cm−3/eV at room temperature. This is comparable to values obtained for commercial silicon devices. Remarkably, the subthreshold slope of the black phosphorous field-effect transistors becomes steeper after several months, a signature of performance improvement that points towards a positive aging effect, despite extended storage and operation in the laboratory environment.
format	article
author	Yu. Yu. Illarionov M. Waltl G. Rzepa T. Knobloch J.-S. Kim D. Akinwande T. Grasser
author_facet	Yu. Yu. Illarionov M. Waltl G. Rzepa T. Knobloch J.-S. Kim D. Akinwande T. Grasser
author_sort	Yu. Yu. Illarionov
title	Highly-stable black phosphorus field-effect transistors with low density of oxide traps
title_short	Highly-stable black phosphorus field-effect transistors with low density of oxide traps
title_full	Highly-stable black phosphorus field-effect transistors with low density of oxide traps
title_fullStr	Highly-stable black phosphorus field-effect transistors with low density of oxide traps
title_full_unstemmed	Highly-stable black phosphorus field-effect transistors with low density of oxide traps
title_sort	highly-stable black phosphorus field-effect transistors with low density of oxide traps
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/42dbdc5beb3c45e1bf47ac3c7c484a9b
work_keys_str_mv	AT yuyuillarionov highlystableblackphosphorusfieldeffecttransistorswithlowdensityofoxidetraps AT mwaltl highlystableblackphosphorusfieldeffecttransistorswithlowdensityofoxidetraps AT grzepa highlystableblackphosphorusfieldeffecttransistorswithlowdensityofoxidetraps AT tknobloch highlystableblackphosphorusfieldeffecttransistorswithlowdensityofoxidetraps AT jskim highlystableblackphosphorusfieldeffecttransistorswithlowdensityofoxidetraps AT dakinwande highlystableblackphosphorusfieldeffecttransistorswithlowdensityofoxidetraps AT tgrasser highlystableblackphosphorusfieldeffecttransistorswithlowdensityofoxidetraps
_version_	1718392551259504640

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Ejemplares similares