In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

Abstract Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and densi...

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Autores principales:	Sean Knight, Tino Hofmann, Chamseddine Bouhafs, Nerijus Armakavicius, Philipp Kühne, Vallery Stanishev, Ivan G. Ivanov, Rositsa Yakimova, Shawn Wimer, Mathias Schubert, Vanya Darakchieva
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/43165a8e218d4f1ea36a7efdb4794529
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spelling	oai:doaj.org-article:43165a8e218d4f1ea36a7efdb47945292021-12-02T15:05:39ZIn-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene10.1038/s41598-017-05333-w2045-2322https://doaj.org/article/43165a8e218d4f1ea36a7efdb47945292017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05333-whttps://doaj.org/toc/2045-2322Abstract Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.Sean KnightTino HofmannChamseddine BouhafsNerijus ArmakaviciusPhilipp KühneVallery StanishevIvan G. IvanovRositsa YakimovaShawn WimerMathias SchubertVanya DarakchievaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sean Knight Tino Hofmann Chamseddine Bouhafs Nerijus Armakavicius Philipp Kühne Vallery Stanishev Ivan G. Ivanov Rositsa Yakimova Shawn Wimer Mathias Schubert Vanya Darakchieva In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
description	Abstract Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.
format	article
author	Sean Knight Tino Hofmann Chamseddine Bouhafs Nerijus Armakavicius Philipp Kühne Vallery Stanishev Ivan G. Ivanov Rositsa Yakimova Shawn Wimer Mathias Schubert Vanya Darakchieva
author_facet	Sean Knight Tino Hofmann Chamseddine Bouhafs Nerijus Armakavicius Philipp Kühne Vallery Stanishev Ivan G. Ivanov Rositsa Yakimova Shawn Wimer Mathias Schubert Vanya Darakchieva
author_sort	Sean Knight
title	In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
title_short	In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
title_full	In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
title_fullStr	In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
title_full_unstemmed	In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
title_sort	in-situ terahertz optical hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/43165a8e218d4f1ea36a7efdb4794529
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In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

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