In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
Abstract Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and densi...
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Autores principales: | Sean Knight, Tino Hofmann, Chamseddine Bouhafs, Nerijus Armakavicius, Philipp Kühne, Vallery Stanishev, Ivan G. Ivanov, Rositsa Yakimova, Shawn Wimer, Mathias Schubert, Vanya Darakchieva |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
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Materias: | |
Acceso en línea: | https://doaj.org/article/43165a8e218d4f1ea36a7efdb4794529 |
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