In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

Abstract Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and densi...

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Autores principales: Sean Knight, Tino Hofmann, Chamseddine Bouhafs, Nerijus Armakavicius, Philipp Kühne, Vallery Stanishev, Ivan G. Ivanov, Rositsa Yakimova, Shawn Wimer, Mathias Schubert, Vanya Darakchieva
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/43165a8e218d4f1ea36a7efdb4794529
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