Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

Abstract Radio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in s...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Raisei Mizokuchi, Sinan Bugu, Masaru Hirayama, Jun Yoneda, Tetsuo Kodera
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/43402496de7642ccb45cff5beb68fd41
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:43402496de7642ccb45cff5beb68fd41
record_format	dspace
spelling	oai:doaj.org-article:43402496de7642ccb45cff5beb68fd412021-12-02T15:52:21ZRadio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response10.1038/s41598-021-85231-42045-2322https://doaj.org/article/43402496de7642ccb45cff5beb68fd412021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85231-4https://doaj.org/toc/2045-2322Abstract Radio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.Raisei MizokuchiSinan BuguMasaru HirayamaJun YonedaTetsuo KoderaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Raisei Mizokuchi Sinan Bugu Masaru Hirayama Jun Yoneda Tetsuo Kodera Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
description	Abstract Radio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.
format	article
author	Raisei Mizokuchi Sinan Bugu Masaru Hirayama Jun Yoneda Tetsuo Kodera
author_facet	Raisei Mizokuchi Sinan Bugu Masaru Hirayama Jun Yoneda Tetsuo Kodera
author_sort	Raisei Mizokuchi
title	Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
title_short	Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
title_full	Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
title_fullStr	Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
title_full_unstemmed	Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
title_sort	radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/43402496de7642ccb45cff5beb68fd41
work_keys_str_mv	AT raiseimizokuchi radiofrequencysingleelectrontransistorsinphysicallydefinedsiliconquantumdotswithasensitivephaseresponse AT sinanbugu radiofrequencysingleelectrontransistorsinphysicallydefinedsiliconquantumdotswithasensitivephaseresponse AT masaruhirayama radiofrequencysingleelectrontransistorsinphysicallydefinedsiliconquantumdotswithasensitivephaseresponse AT junyoneda radiofrequencysingleelectrontransistorsinphysicallydefinedsiliconquantumdotswithasensitivephaseresponse AT tetsuokodera radiofrequencysingleelectrontransistorsinphysicallydefinedsiliconquantumdotswithasensitivephaseresponse
_version_	1718385566300504064

Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

Ejemplares similares