The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Abstract In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced during the interruption after the growth...

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Autores principales:	Yuhao Ben, Feng Liang, Degang Zhao, Jing Yang, Zongshun Liu, Ping Chen
Formato:	article
Lenguaje:	EN
Publicado:	SpringerOpen 2021
Materias:	Atomic rearrangement Hydrogen treatment GaN-based MQWs Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/4363aa7995b5478d9ea418a5f6dd683a
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spelling	oai:doaj.org-article:4363aa7995b5478d9ea418a5f6dd683a2021-11-08T11:13:58ZThe Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties10.1186/s11671-021-03618-81556-276Xhttps://doaj.org/article/4363aa7995b5478d9ea418a5f6dd683a2021-11-01T00:00:00Zhttps://doi.org/10.1186/s11671-021-03618-8https://doaj.org/toc/1556-276XAbstract In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H2/NH3 mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.Yuhao BenFeng LiangDegang ZhaoJing YangZongshun LiuPing ChenSpringerOpenarticleAtomic rearrangementHydrogen treatmentGaN-based MQWsMaterials of engineering and construction. Mechanics of materialsTA401-492ENNanoscale Research Letters, Vol 16, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Atomic rearrangement Hydrogen treatment GaN-based MQWs Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Atomic rearrangement Hydrogen treatment GaN-based MQWs Materials of engineering and construction. Mechanics of materials TA401-492 Yuhao Ben Feng Liang Degang Zhao Jing Yang Zongshun Liu Ping Chen The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties
description	Abstract In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H2/NH3 mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.
format	article
author	Yuhao Ben Feng Liang Degang Zhao Jing Yang Zongshun Liu Ping Chen
author_facet	Yuhao Ben Feng Liang Degang Zhao Jing Yang Zongshun Liu Ping Chen
author_sort	Yuhao Ben
title	The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties
title_short	The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties
title_full	The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties
title_fullStr	The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties
title_full_unstemmed	The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties
title_sort	atomic rearrangement of gan-based multiple quantum wells in h2/nh3 mixed gas for improving structural and optical properties
publisher	SpringerOpen
publishDate	2021
url	https://doaj.org/article/4363aa7995b5478d9ea418a5f6dd683a
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The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

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