Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets
Abstract The conductivity increases as thickness decreases in a series of Sb2SeTe2 topological insulator nanosheets with thickness ranging from 80 to 200 nm, where the sheet conductance is proportional to the thickness. The corresponding sheet conductance of the surface state is 8.7 e2/h which is co...
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2017
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oai:doaj.org-article:4400fe9528a340a1a893fb29779d2ebb2021-12-02T15:06:09ZThickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets10.1038/s41598-017-02102-72045-2322https://doaj.org/article/4400fe9528a340a1a893fb29779d2ebb2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02102-7https://doaj.org/toc/2045-2322Abstract The conductivity increases as thickness decreases in a series of Sb2SeTe2 topological insulator nanosheets with thickness ranging from 80 to 200 nm, where the sheet conductance is proportional to the thickness. The corresponding sheet conductance of the surface state is 8.7 e2/h which is consistent with the values extracted from the temperature dependent Shubnikov-de Haas oscillations at high magnetic fields. The extracted Fermi momentum is the same as the results from the ARPES value, and the Berry phase is π. These support that the thickness dependent sheet conductance originates from the combination of the surface state and the bulk state.Shiu-Ming HuangYou-Jhih YanShih-Hsun YuMitch ChouNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017) |
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Medicine R Science Q Shiu-Ming Huang You-Jhih Yan Shih-Hsun Yu Mitch Chou Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets |
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Abstract The conductivity increases as thickness decreases in a series of Sb2SeTe2 topological insulator nanosheets with thickness ranging from 80 to 200 nm, where the sheet conductance is proportional to the thickness. The corresponding sheet conductance of the surface state is 8.7 e2/h which is consistent with the values extracted from the temperature dependent Shubnikov-de Haas oscillations at high magnetic fields. The extracted Fermi momentum is the same as the results from the ARPES value, and the Berry phase is π. These support that the thickness dependent sheet conductance originates from the combination of the surface state and the bulk state. |
format |
article |
author |
Shiu-Ming Huang You-Jhih Yan Shih-Hsun Yu Mitch Chou |
author_facet |
Shiu-Ming Huang You-Jhih Yan Shih-Hsun Yu Mitch Chou |
author_sort |
Shiu-Ming Huang |
title |
Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets |
title_short |
Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets |
title_full |
Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets |
title_fullStr |
Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets |
title_full_unstemmed |
Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets |
title_sort |
thickness-dependent conductance in sb2sete2 topological insulator nanosheets |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/4400fe9528a340a1a893fb29779d2ebb |
work_keys_str_mv |
AT shiuminghuang thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets AT youjhihyan thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets AT shihhsunyu thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets AT mitchchou thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets |
_version_ |
1718388578605596672 |