Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets

Abstract The conductivity increases as thickness decreases in a series of Sb2SeTe2 topological insulator nanosheets with thickness ranging from 80 to 200 nm, where the sheet conductance is proportional to the thickness. The corresponding sheet conductance of the surface state is 8.7 e2/h which is co...

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Autores principales: Shiu-Ming Huang, You-Jhih Yan, Shih-Hsun Yu, Mitch Chou
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Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/4400fe9528a340a1a893fb29779d2ebb
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spelling oai:doaj.org-article:4400fe9528a340a1a893fb29779d2ebb2021-12-02T15:06:09ZThickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets10.1038/s41598-017-02102-72045-2322https://doaj.org/article/4400fe9528a340a1a893fb29779d2ebb2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02102-7https://doaj.org/toc/2045-2322Abstract The conductivity increases as thickness decreases in a series of Sb2SeTe2 topological insulator nanosheets with thickness ranging from 80 to 200 nm, where the sheet conductance is proportional to the thickness. The corresponding sheet conductance of the surface state is 8.7 e2/h which is consistent with the values extracted from the temperature dependent Shubnikov-de Haas oscillations at high magnetic fields. The extracted Fermi momentum is the same as the results from the ARPES value, and the Berry phase is π. These support that the thickness dependent sheet conductance originates from the combination of the surface state and the bulk state.Shiu-Ming HuangYou-Jhih YanShih-Hsun YuMitch ChouNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Shiu-Ming Huang
You-Jhih Yan
Shih-Hsun Yu
Mitch Chou
Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets
description Abstract The conductivity increases as thickness decreases in a series of Sb2SeTe2 topological insulator nanosheets with thickness ranging from 80 to 200 nm, where the sheet conductance is proportional to the thickness. The corresponding sheet conductance of the surface state is 8.7 e2/h which is consistent with the values extracted from the temperature dependent Shubnikov-de Haas oscillations at high magnetic fields. The extracted Fermi momentum is the same as the results from the ARPES value, and the Berry phase is π. These support that the thickness dependent sheet conductance originates from the combination of the surface state and the bulk state.
format article
author Shiu-Ming Huang
You-Jhih Yan
Shih-Hsun Yu
Mitch Chou
author_facet Shiu-Ming Huang
You-Jhih Yan
Shih-Hsun Yu
Mitch Chou
author_sort Shiu-Ming Huang
title Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets
title_short Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets
title_full Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets
title_fullStr Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets
title_full_unstemmed Thickness-dependent conductance in Sb2SeTe2 topological insulator nanosheets
title_sort thickness-dependent conductance in sb2sete2 topological insulator nanosheets
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/4400fe9528a340a1a893fb29779d2ebb
work_keys_str_mv AT shiuminghuang thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets
AT youjhihyan thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets
AT shihhsunyu thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets
AT mitchchou thicknessdependentconductanceinsb2sete2topologicalinsulatornanosheets
_version_ 1718388578605596672