Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds

An optical characterization of wurtzite Zn1-x-yCdxMgySe crystalline alloys grown by the modified high-pressure Bridgman method has been carried out by temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 103...

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Autores principales:	Dumcenco, Dumitru, Levcenco, Sergiu, Huang, Ying-Sheng, Firszt, F., Hsu, H, Tiong, Kwong-Kaw
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/448c12cb8d804a178a65c4a4f9987719
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spelling	oai:doaj.org-article:448c12cb8d804a178a65c4a4f99877192021-11-21T12:02:50ZPhotoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds2537-63651810-648Xhttps://doaj.org/article/448c12cb8d804a178a65c4a4f99877192011-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4302https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365An optical characterization of wurtzite Zn1-x-yCdxMgySe crystalline alloys grown by the modified high-pressure Bridgman method has been carried out by temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 10300 K, and photoreflectance (PR) measurements between 300400 K as well as surface photovoltage spectroscopy (SPS) at 300 K. Low temperature PL spectra of the investigated samples consist of an excitonic line, the “edge emission” due to radiative recombination of shallow donor-acceptor pairs and a broad band related to recombination through deep level defects. Three excitonic features, A, B and C, in the vicinity of band edge were observed in the CER and PR spectra. The peak positions of band-edge excitonic features in the PL spectra are shifted slightly towards lower energies as compared to the lowest corresponding transition energies of A exciton determined from CER and PR data. The increase of the CER-PL shift with the increasing of Mg content in the investigated crystals is explained by the rising of compositional disorder causing the smearing of the band-edge energies. In addition, the coincidence of energy positions of features obtained from SPS measurements with excitonic transition energies E0A determined from CER/PR data at 300 K confirm the proper surface treatment of the samples. Dumcenco, DumitruLevcenco, SergiuHuang, Ying-ShengFirszt, F.Hsu, HTiong, Kwong-KawD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 1, Pp 44-51 (2011)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Dumcenco, Dumitru Levcenco, Sergiu Huang, Ying-Sheng Firszt, F. Hsu, H Tiong, Kwong-Kaw Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds
description	An optical characterization of wurtzite Zn1-x-yCdxMgySe crystalline alloys grown by the modified high-pressure Bridgman method has been carried out by temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 10300 K, and photoreflectance (PR) measurements between 300400 K as well as surface photovoltage spectroscopy (SPS) at 300 K. Low temperature PL spectra of the investigated samples consist of an excitonic line, the “edge emission” due to radiative recombination of shallow donor-acceptor pairs and a broad band related to recombination through deep level defects. Three excitonic features, A, B and C, in the vicinity of band edge were observed in the CER and PR spectra. The peak positions of band-edge excitonic features in the PL spectra are shifted slightly towards lower energies as compared to the lowest corresponding transition energies of A exciton determined from CER and PR data. The increase of the CER-PL shift with the increasing of Mg content in the investigated crystals is explained by the rising of compositional disorder causing the smearing of the band-edge energies. In addition, the coincidence of energy positions of features obtained from SPS measurements with excitonic transition energies E0A determined from CER/PR data at 300 K confirm the proper surface treatment of the samples.
format	article
author	Dumcenco, Dumitru Levcenco, Sergiu Huang, Ying-Sheng Firszt, F. Hsu, H Tiong, Kwong-Kaw
author_facet	Dumcenco, Dumitru Levcenco, Sergiu Huang, Ying-Sheng Firszt, F. Hsu, H Tiong, Kwong-Kaw
author_sort	Dumcenco, Dumitru
title	Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds
title_short	Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds
title_full	Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds
title_fullStr	Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds
title_full_unstemmed	Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds
title_sort	photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary zn1-x-ycdxmgyse compounds
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2011
url	https://doaj.org/article/448c12cb8d804a178a65c4a4f9987719
work_keys_str_mv	AT dumcencodumitru photoluminescencemodulationspectroscopyandsurfacephotovoltagecharacterizationofquaternaryzn1xycdxmgysecompounds AT levcencosergiu photoluminescencemodulationspectroscopyandsurfacephotovoltagecharacterizationofquaternaryzn1xycdxmgysecompounds AT huangyingsheng photoluminescencemodulationspectroscopyandsurfacephotovoltagecharacterizationofquaternaryzn1xycdxmgysecompounds AT firsztf photoluminescencemodulationspectroscopyandsurfacephotovoltagecharacterizationofquaternaryzn1xycdxmgysecompounds AT hsuh photoluminescencemodulationspectroscopyandsurfacephotovoltagecharacterizationofquaternaryzn1xycdxmgysecompounds AT tiongkwongkaw photoluminescencemodulationspectroscopyandsurfacephotovoltagecharacterizationofquaternaryzn1xycdxmgysecompounds
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Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds

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