All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures

Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, h...

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Autores principales:	Sun Feiying, Nie Changbin, Wei Xingzhan, Mao Hu, Zhang Yupeng, Wang Guo Ping
Formato:	article
Lenguaje:	EN
Publicado:	De Gruyter 2021
Materias:	all-optical modulator intraband transition mos2 plasmonic nanoslit waveguide Physics QC1-999
Acceso en línea:	https://doaj.org/article/44ddf7df8d474f1aa14614747a082a01
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id	oai:doaj.org-article:44ddf7df8d474f1aa14614747a082a01
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spelling	oai:doaj.org-article:44ddf7df8d474f1aa14614747a082a012021-12-05T14:10:56ZAll-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures2192-861410.1515/nanoph-2021-0279https://doaj.org/article/44ddf7df8d474f1aa14614747a082a012021-10-01T00:00:00Zhttps://doi.org/10.1515/nanoph-2021-0279https://doaj.org/toc/2192-8614Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.Sun FeiyingNie ChangbinWei XingzhanMao HuZhang YupengWang Guo PingDe Gruyterarticleall-optical modulatorintraband transitionmos2 plasmonic nanoslitwaveguidePhysicsQC1-999ENNanophotonics, Vol 10, Iss 16, Pp 3957-3965 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	all-optical modulator intraband transition mos2 plasmonic nanoslit waveguide Physics QC1-999
spellingShingle	all-optical modulator intraband transition mos2 plasmonic nanoslit waveguide Physics QC1-999 Sun Feiying Nie Changbin Wei Xingzhan Mao Hu Zhang Yupeng Wang Guo Ping All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures
description	Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.
format	article
author	Sun Feiying Nie Changbin Wei Xingzhan Mao Hu Zhang Yupeng Wang Guo Ping
author_facet	Sun Feiying Nie Changbin Wei Xingzhan Mao Hu Zhang Yupeng Wang Guo Ping
author_sort	Sun Feiying
title	All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures
title_short	All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures
title_full	All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures
title_fullStr	All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures
title_full_unstemmed	All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures
title_sort	all-optical modulation based on mos2-plasmonic nanoslit hybrid structures
publisher	De Gruyter
publishDate	2021
url	https://doaj.org/article/44ddf7df8d474f1aa14614747a082a01
work_keys_str_mv	AT sunfeiying allopticalmodulationbasedonmos2plasmonicnanoslithybridstructures AT niechangbin allopticalmodulationbasedonmos2plasmonicnanoslithybridstructures AT weixingzhan allopticalmodulationbasedonmos2plasmonicnanoslithybridstructures AT maohu allopticalmodulationbasedonmos2plasmonicnanoslithybridstructures AT zhangyupeng allopticalmodulationbasedonmos2plasmonicnanoslithybridstructures AT wangguoping allopticalmodulationbasedonmos2plasmonicnanoslithybridstructures
_version_	1718371531086626816

All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures

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