Ab initio electron-two-phonon scattering in GaAs from next-to-leading order perturbation theory
Electron-phonon scattering plays a decisive role in electron transport and is taken into account in ab initio calculations by leading-order perturbations involving scattering events with one phonon. Here, the authors show that higher-order effects are comparable in magnitude to the leading order in...
Guardado en:
Autores principales: | Nien-En Lee, Jin-Jian Zhou, Hsiao-Yi Chen, Marco Bernardi |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
|
Materias: | |
Acceso en línea: | https://doaj.org/article/44fdcff9edb842ceb2fdd3718b2b6210 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Ab Initio Approach to Second-order Resonant Raman Scattering Including Exciton-Phonon Interaction
por: Yannick Gillet, et al.
Publicado: (2017) -
Spin-phonon relaxation from a universal ab initio density-matrix approach
por: Junqing Xu, et al.
Publicado: (2020) -
Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
por: Leon C. Camenzind, et al.
Publicado: (2018) -
Precision measurement of electron-electron scattering in GaAs/AlGaAs using transverse magnetic focusing
por: Adbhut Gupta, et al.
Publicado: (2021) -
Ab Initio revista digital para estudiantes de historia.
Publicado: (2011)