Atomic mechanism of strong interactions at the graphene/sapphire interface
Understanding the atomic arrangement and binding nature of 2D materials with substrates is crucial to understand their properties and utilize their functions. Here, authors report that at high temperature graphene and α-Al2O3 substrate form a C-O-Al bond, having strong interactions, while interfacia...
Guardado en:
Autores principales: | Zhipeng Dou, Zhaolong Chen, Ning Li, Shenyuan Yang, Zhiwei Yu, Yuanwei Sun, Yuehui Li, Bingyao Liu, Qiang Luo, Tianbao Ma, Lei Liao, Zhongfan Liu, Peng Gao |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2019
|
Materias: | |
Acceso en línea: | https://doaj.org/article/457c6346041548558c07330cc825fb2e |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Wafer scale BN on sapphire substrates for improved graphene transport
por: Shivashankar Vangala, et al.
Publicado: (2018) -
Engineering of Ti:Sapphire Lasers for Dermatology and Aesthetic Medicine
por: Aleksandr Tarasov, et al.
Publicado: (2021) -
Ionization behavior and dynamics of picosecond laser filamentation in sapphire
por: Amina, et al.
Publicado: (2019) -
Elastocapillary cleaning of twisted bilayer graphene interfaces
por: Yuan Hou, et al.
Publicado: (2021) -
Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition
por: Ruinan Wu, et al.
Publicado: (2021)