High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

Electronics: Microfabrication enables integrated silicon-based thin-film transistors Semiconductor-based thin-film electronics is an emerging field in modern electronics due to the advance in mechanical flexibility, yet the fabrication that is currently relied on the conventional technologies for ri...

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Autores principales:	Jung-Hun Seo, Kan Zhang, Munho Kim, Weidong Zhou, Zhenqiang Ma
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/45b69454335f49f3909a0dc1df4356a4
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spelling	oai:doaj.org-article:45b69454335f49f3909a0dc1df4356a42021-12-02T14:18:12ZHigh-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane10.1038/s41528-017-0001-12397-4621https://doaj.org/article/45b69454335f49f3909a0dc1df4356a42017-09-01T00:00:00Zhttps://doi.org/10.1038/s41528-017-0001-1https://doaj.org/toc/2397-4621Electronics: Microfabrication enables integrated silicon-based thin-film transistors Semiconductor-based thin-film electronics is an emerging field in modern electronics due to the advance in mechanical flexibility, yet the fabrication that is currently relied on the conventional technologies for rigid devices constrain the integration of functional devices on one chip. A team lead by Zhenqiang Ma at University of Wisconsin-Madison developed a single batch processing technique, which allowed them to print multiple transistors on a single piece of plastic substrate. The key step is to selectively dope single crystalline silicon nanomembranes using spatially controllable ion implantation. As a demonstration, integrated bipolar-complementary metal-oxide-semiconductor thin-film transistors with performance comparable to their rigid counterparts are built. The fabrication reported might prove to be an enabling technology for processing a broad range of flexible electronics with potential industrial adaptability.Jung-Hun SeoKan ZhangMunho KimWeidong ZhouZhenqiang MaNature PortfolioarticleElectronicsTK7800-8360Materials of engineering and construction. Mechanics of materialsTA401-492ENnpj Flexible Electronics, Vol 1, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492 Jung-Hun Seo Kan Zhang Munho Kim Weidong Zhou Zhenqiang Ma High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
description	Electronics: Microfabrication enables integrated silicon-based thin-film transistors Semiconductor-based thin-film electronics is an emerging field in modern electronics due to the advance in mechanical flexibility, yet the fabrication that is currently relied on the conventional technologies for rigid devices constrain the integration of functional devices on one chip. A team lead by Zhenqiang Ma at University of Wisconsin-Madison developed a single batch processing technique, which allowed them to print multiple transistors on a single piece of plastic substrate. The key step is to selectively dope single crystalline silicon nanomembranes using spatially controllable ion implantation. As a demonstration, integrated bipolar-complementary metal-oxide-semiconductor thin-film transistors with performance comparable to their rigid counterparts are built. The fabrication reported might prove to be an enabling technology for processing a broad range of flexible electronics with potential industrial adaptability.
format	article
author	Jung-Hun Seo Kan Zhang Munho Kim Weidong Zhou Zhenqiang Ma
author_facet	Jung-Hun Seo Kan Zhang Munho Kim Weidong Zhou Zhenqiang Ma
author_sort	Jung-Hun Seo
title	High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
title_short	High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
title_full	High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
title_fullStr	High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
title_full_unstemmed	High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
title_sort	high-performance flexible bicmos electronics based on single-crystal si nanomembrane
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/45b69454335f49f3909a0dc1df4356a4
work_keys_str_mv	AT junghunseo highperformanceflexiblebicmoselectronicsbasedonsinglecrystalsinanomembrane AT kanzhang highperformanceflexiblebicmoselectronicsbasedonsinglecrystalsinanomembrane AT munhokim highperformanceflexiblebicmoselectronicsbasedonsinglecrystalsinanomembrane AT weidongzhou highperformanceflexiblebicmoselectronicsbasedonsinglecrystalsinanomembrane AT zhenqiangma highperformanceflexiblebicmoselectronicsbasedonsinglecrystalsinanomembrane
_version_	1718391602825658368

High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

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