Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping

Abstract Stacking a magnetic memory junction in spintronic devices necessarily involves making contacts with a transitional-metal capping electrode. Herein, by means of first-principles calculations, we reveal the importance of heavy transition-metal capping on magnetic-phase transition from antifer...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autor principal:	Dorj Odkhuu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/460d7307dc2d47c9be8740c1f905e427
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:460d7307dc2d47c9be8740c1f905e427
record_format	dspace
spelling	oai:doaj.org-article:460d7307dc2d47c9be8740c1f905e4272021-12-02T15:08:40ZInterfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping10.1038/s41598-018-24977-w2045-2322https://doaj.org/article/460d7307dc2d47c9be8740c1f905e4272018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-24977-whttps://doaj.org/toc/2045-2322Abstract Stacking a magnetic memory junction in spintronic devices necessarily involves making contacts with a transitional-metal capping electrode. Herein, by means of first-principles calculations, we reveal the importance of heavy transition-metal capping on magnetic-phase transition from antiferromagnetic (AFM) to ferromagnetic (FM) order and the large perpendicular magnetic anisotropy (PMA) found in Ta-capped FeRh films on MgO substrate. While magnetization of FeRh films reorients from in-plane to PMA when in contact with MgO, the presence of Ta capping further enhances the magnitude of the PMA energy by at least five times. This large PMA is associated with the AFM-FM transition at the interface, which in turn modifies the out-of-plane Fe 3d orbital states through the hybridization with the strong spin-orbit coupled Ta 5d orbitals. Furthermore, the magnetic-phase transition at the interface is the result of the mutual mechanisms of the capping-induced volume/tetragonal expansion in the interfacial FeRh layers and the competition between the direct and indirect exchange interactions. These findings suggest that Ta/FeRh/MgO multilayers may represent highly favourable memory materials with net interfacial ferromagnetism and large PMA in antiferromagnet spintronics.Dorj OdkhuuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dorj Odkhuu Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping
description	Abstract Stacking a magnetic memory junction in spintronic devices necessarily involves making contacts with a transitional-metal capping electrode. Herein, by means of first-principles calculations, we reveal the importance of heavy transition-metal capping on magnetic-phase transition from antiferromagnetic (AFM) to ferromagnetic (FM) order and the large perpendicular magnetic anisotropy (PMA) found in Ta-capped FeRh films on MgO substrate. While magnetization of FeRh films reorients from in-plane to PMA when in contact with MgO, the presence of Ta capping further enhances the magnitude of the PMA energy by at least five times. This large PMA is associated with the AFM-FM transition at the interface, which in turn modifies the out-of-plane Fe 3d orbital states through the hybridization with the strong spin-orbit coupled Ta 5d orbitals. Furthermore, the magnetic-phase transition at the interface is the result of the mutual mechanisms of the capping-induced volume/tetragonal expansion in the interfacial FeRh layers and the competition between the direct and indirect exchange interactions. These findings suggest that Ta/FeRh/MgO multilayers may represent highly favourable memory materials with net interfacial ferromagnetism and large PMA in antiferromagnet spintronics.
format	article
author	Dorj Odkhuu
author_facet	Dorj Odkhuu
author_sort	Dorj Odkhuu
title	Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping
title_short	Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping
title_full	Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping
title_fullStr	Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping
title_full_unstemmed	Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping
title_sort	interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in ferh/mgo by a heavy transition-metal capping
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/460d7307dc2d47c9be8740c1f905e427
work_keys_str_mv	AT dorjodkhuu interfacialmagneticphasetransitionmediatedlargeperpendicularmagneticanisotropyinferhmgobyaheavytransitionmetalcapping
_version_	1718388056072912896

Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping

Ejemplares similares