Interfacial magnetic-phase transition mediated large perpendicular magnetic anisotropy in FeRh/MgO by a heavy transition-metal capping
Abstract Stacking a magnetic memory junction in spintronic devices necessarily involves making contacts with a transitional-metal capping electrode. Herein, by means of first-principles calculations, we reveal the importance of heavy transition-metal capping on magnetic-phase transition from antifer...
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| Formato: | article |
| Lenguaje: | EN |
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Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/460d7307dc2d47c9be8740c1f905e427 |
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