Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/464354d529fc49dbaaf93d5fb8a78800 |
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| Sumario: | Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation. |
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