Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.

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Autores principales:	Matteo Ghittorelli, Thomas Lenz, Hamed Sharifi Dehsari, Dong Zhao, Kamal Asadi, Paul W. M. Blom, Zsolt M. Kovács-Vajna, Dago M. de Leeuw, Fabrizio Torricelli
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/464354d529fc49dbaaf93d5fb8a78800
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spelling	oai:doaj.org-article:464354d529fc49dbaaf93d5fb8a788002021-12-02T14:42:27ZQuantum tunnelling and charge accumulation in organic ferroelectric memory diodes10.1038/ncomms158412041-1723https://doaj.org/article/464354d529fc49dbaaf93d5fb8a788002017-06-01T00:00:00Zhttps://doi.org/10.1038/ncomms15841https://doaj.org/toc/2041-1723Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.Matteo GhittorelliThomas LenzHamed Sharifi DehsariDong ZhaoKamal AsadiPaul W. M. BlomZsolt M. Kovács-VajnaDago M. de LeeuwFabrizio TorricelliNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Matteo Ghittorelli Thomas Lenz Hamed Sharifi Dehsari Dong Zhao Kamal Asadi Paul W. M. Blom Zsolt M. Kovács-Vajna Dago M. de Leeuw Fabrizio Torricelli Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
description	Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.
format	article
author	Matteo Ghittorelli Thomas Lenz Hamed Sharifi Dehsari Dong Zhao Kamal Asadi Paul W. M. Blom Zsolt M. Kovács-Vajna Dago M. de Leeuw Fabrizio Torricelli
author_facet	Matteo Ghittorelli Thomas Lenz Hamed Sharifi Dehsari Dong Zhao Kamal Asadi Paul W. M. Blom Zsolt M. Kovács-Vajna Dago M. de Leeuw Fabrizio Torricelli
author_sort	Matteo Ghittorelli
title	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_short	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_full	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_fullStr	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_full_unstemmed	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_sort	quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/464354d529fc49dbaaf93d5fb8a78800
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Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

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