Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

abstract The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illu...

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Autores principales:	Shafaq Kazim, Alka Sharma, Sachin Yadav, Bikash Gajar, Lalit M. Joshi, Monu Mishra, Govind Gupta, Sudhir Husale, Anurag Gupta, Sangeeta Sahoo, V. N. Ojha
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/46ea56580d9a4b019274859df83656c5
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spelling	oai:doaj.org-article:46ea56580d9a4b019274859df83656c52021-12-02T15:06:24ZLight Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor10.1038/s41598-017-00976-12045-2322https://doaj.org/article/46ea56580d9a4b019274859df83656c52017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00976-1https://doaj.org/toc/2045-2322abstract The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.Shafaq KazimAlka SharmaSachin YadavBikash GajarLalit M. JoshiMonu MishraGovind GuptaSudhir HusaleAnurag GuptaSangeeta SahooV. N. OjhaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shafaq Kazim Alka Sharma Sachin Yadav Bikash Gajar Lalit M. Joshi Monu Mishra Govind Gupta Sudhir Husale Anurag Gupta Sangeeta Sahoo V. N. Ojha Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor
description	abstract The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.
format	article
author	Shafaq Kazim Alka Sharma Sachin Yadav Bikash Gajar Lalit M. Joshi Monu Mishra Govind Gupta Sudhir Husale Anurag Gupta Sangeeta Sahoo V. N. Ojha
author_facet	Shafaq Kazim Alka Sharma Sachin Yadav Bikash Gajar Lalit M. Joshi Monu Mishra Govind Gupta Sudhir Husale Anurag Gupta Sangeeta Sahoo V. N. Ojha
author_sort	Shafaq Kazim
title	Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor
title_short	Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor
title_full	Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor
title_fullStr	Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor
title_full_unstemmed	Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor
title_sort	light induced electron-phonon scattering mediated resistive switching in nanostructured nb thin film superconductor
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/46ea56580d9a4b019274859df83656c5
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Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

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