UTBB-Based Single Transistor Image Sensor of Submicron Pixel Using Back Gate Modulation
Image sensor has developed for decades. Now, submicron photo sensor device with high performance is required. In this work, a UTBB (ultra-thin body and box) based single transistor image sensor has been investigated. The light collection and signal readout are accomplished by a single transistor, so...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/47c6fd62c405411fa9e95ebf2098fcbc |
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| Sumario: | Image sensor has developed for decades. Now, submicron photo sensor device with high performance is required. In this work, a UTBB (ultra-thin body and box) based single transistor image sensor has been investigated. The light collection and signal readout are accomplished by a single transistor, so the pixel of the UTBB image sensor can shrink down to the submicron. The main parameters impacting the performance of the UTBB image sensor such as back voltage, the thickness of the BOX, well doping concentration and well depth are investigated. Besides, the UTBB image sensor can achieve multi-resolution to adapt to different requirements. The performance of the UTBB image sensor is evaluated by TCAD simulations. |
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