Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Abstract Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importan...

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Autores principales:	Xiaodong Zhou, Run-Wu Zhang, Zeying Zhang, Wanxiang Feng, Yuriy Mokrousov, Yugui Yao
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
Acceso en línea:	https://doaj.org/article/480baced70884931a9a5847842d66287
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spelling	oai:doaj.org-article:480baced70884931a9a5847842d662872021-12-02T17:18:20ZSign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors10.1038/s41524-021-00632-32057-3960https://doaj.org/article/480baced70884931a9a5847842d662872021-10-01T00:00:00Zhttps://doi.org/10.1038/s41524-021-00632-3https://doaj.org/toc/2057-3960Abstract Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.Xiaodong ZhouRun-Wu ZhangZeying ZhangWanxiang FengYuriy MokrousovYugui YaoNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Computer softwareQA76.75-76.765ENnpj Computational Materials, Vol 7, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765 Xiaodong Zhou Run-Wu Zhang Zeying Zhang Wanxiang Feng Yuriy Mokrousov Yugui Yao Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
description	Abstract Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.
format	article
author	Xiaodong Zhou Run-Wu Zhang Zeying Zhang Wanxiang Feng Yuriy Mokrousov Yugui Yao
author_facet	Xiaodong Zhou Run-Wu Zhang Zeying Zhang Wanxiang Feng Yuriy Mokrousov Yugui Yao
author_sort	Xiaodong Zhou
title	Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
title_short	Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
title_full	Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
title_fullStr	Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
title_full_unstemmed	Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
title_sort	sign-reversible valley-dependent berry phase effects in 2d valley-half-semiconductors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/480baced70884931a9a5847842d66287
work_keys_str_mv	AT xiaodongzhou signreversiblevalleydependentberryphaseeffectsin2dvalleyhalfsemiconductors AT runwuzhang signreversiblevalleydependentberryphaseeffectsin2dvalleyhalfsemiconductors AT zeyingzhang signreversiblevalleydependentberryphaseeffectsin2dvalleyhalfsemiconductors AT wanxiangfeng signreversiblevalleydependentberryphaseeffectsin2dvalleyhalfsemiconductors AT yuriymokrousov signreversiblevalleydependentberryphaseeffectsin2dvalleyhalfsemiconductors AT yuguiyao signreversiblevalleydependentberryphaseeffectsin2dvalleyhalfsemiconductors
_version_	1718381142569123840

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

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